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Fabien Rouillard

Researcher at Commissariat à l'énergie atomique et aux énergies alternatives

Publications -  28
Citations -  715

Fabien Rouillard is an academic researcher from Commissariat à l'énergie atomique et aux énergies alternatives. The author has contributed to research in topics: Corrosion & Oxide. The author has an hindex of 14, co-authored 28 publications receiving 583 citations. Previous affiliations of Fabien Rouillard include École Normale Supérieure.

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Corrosion of 9Cr steel in CO 2 at intermediate temperature I: Mechanism of void-induced duplex oxide formation

TL;DR: In this article, the inner Fe-Cr spinel layer grows according to a mechanism involving void formation at the oxide/metal interface and the driving force for pore formation is the outward magnetite growth.
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Corrosion of 9Cr Steel in CO2 at Intermediate Temperature II: Mechanism of Carburization

TL;DR: In this article, it was observed that an increase of total CO2 pressure in the environment from 1 to 250 bars induces a higher carbon deposition in the inner Fe-Cr rich spinel oxide layer.
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Corrosion of high temperature metallic materials in VHTR

TL;DR: In this article, a chromia-based surface scale is used to act as a barrier against reactive gasses in high temperature conditions, which irreversibly reduces the chromia layer.
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High temperature reactivity of two chromium-containing alloys in impure helium

TL;DR: In this article, critical temperature measurements for chromium-rich nickel base alloys 617 and 230 are presented and the influence of carbon monoxide partial pressure in helium is discussed.
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Corrosion of 9Cr Steel in CO 2 at Intermediate Temperature III: Modelling and Simulation of Void-induced Duplex Oxide Growth

TL;DR: In this article, a void-induced oxidation mechanism was used to simulate the kinetics of the total oxide growth in the inner spinel oxide layer, and it was shown that a network of nanometric high diffusion paths through the oxide layer allows the very fast supply of CO2 inside pores formed at the oxide/metal interface.