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Fawei Zheng

Researcher at Tsinghua University

Publications -  29
Citations -  843

Fawei Zheng is an academic researcher from Tsinghua University. The author has contributed to research in topics: Ferromagnetism & Antiferromagnetism. The author has an hindex of 11, co-authored 20 publications receiving 695 citations. Previous affiliations of Fawei Zheng include Tohoku University.

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Tunable spin states in the two-dimensional magnet CrI3.

TL;DR: This work builds for the first time a substantial magnetic phase diagram under lateral strain and charge doping, the two factors that are easily modulated in single-layer CrI3via substrate and gating controls, and finds that the phase transition under compressive strain is insensitive to Charge doping, whereas the phase Transition under tensile strain is modulated by electron doping significantly.
Journal ArticleDOI

Scaling law of the giant Stark effect in boron nitride nanoribbons and nanotubes

Abstract: Ab initio calculations reveal a universal scaling law on how the electronic structure of boron nitride (BN) nanoribbons and nanotubes is modified by a transverse electric field Due to the structural symmetry difference, the energy gap of zigzag BN ribbons can be reduced or increased by the electric field depending on the sign of the field, while that of the armchair ones is always reduced However, the linear giant Stark effect coefficients of zigzag and armchair BN nanoribbons, as well as those of BN nanotubes, are found to obey a unified scaling law where the coefficient increases linearly with the ribbon width or the tube diameter with a slope of 10 The mechanism of the scaling law is identified using a general model, which may be applicable to other semiconducting nanostructures
Journal ArticleDOI

High-Temperature Quantum Anomalous Hall Insulators in Lithium-Decorated Iron-Based Superconductor Materials.

TL;DR: By first-principles calculations, this work finds a family of stable two-dimensional structures generated by lithium decoration of layered iron-based superconductor materials Fe X(X=S,Se,Te), and predicts room-temperature ferromagnetic semiconductors together with large-gap high-Chern-number QAH insulators in the 2D materials.