Showing papers by "Feng Zhang published in 1999"
Patent•
21 Jul 1999TL;DR: In this article, the authors showed that LCO isolated from Bradyrhizobium japonicum strain 532C was able to stimulate seed germination/seedling emergence, or in the case of potato, sprouting.
Abstract: Lipo Chitooligosaccharide (LCO) [NodBj-V(C18:1,Mefuc)] isolated from Bradyrhizobium japonicum strain 532C was able to stimulate seed germination/seedling emergence, or in the case of potato, sprouting, of a number of crop plants representing eight distantly related plant families (Poaceae, Fabaceae, Brassicaceae, Cucurbitaceac, Malvaceae, Asteraceae, Chenopodiaceae and Solanaceae) of plants, at 25 and/or at 15° C. It also promoted sprouting potato minitubers. Other LCOs [NodRM-V(C16:2,5) and LCO from R. leguminosarum] were also shown to also display growth-promoting effects on the tested crop plants. The compositions comprising at least one LCO are shown to be effective in promoting growth under both laboratory and field conditions. The invention thus also relates to methods for promoting seed germination and/or seedling emergence and/or growth of plants comprising subjecting the seeds and/or plants to an effective amount of an agricultural composition comprising at least one LCO.
38 citations
TL;DR: In this article, an epitaxial Fe overlayers were produced on sulfur-passivated GaAs(100) surfaces by CH3CSNH2 treatment, and the correlation between magnetic properties of the overlayers and surface chemical structure was investigated by ferromagnetic resonance and synchrotron radiation photoemission.
Abstract: We have produced epitaxial Fe overlayers on sulfur-passivated GaAs(100) surfaces by CH3CSNH2 treatment, and investigated the correlation between magnetic properties of the overlayers and surface chemical structure of GaAs(100) surfaces by ferromagnetic resonance and synchrotron radiation photoemission. The surface chemical properties were modified by changing the annealing temperature of the surfaces prior to the growth. The results show that the magnetization of Fe overlayers is crucially determined by the presence of Ga–S chemical bonds and excess As after the anneals. A comparative investigation of the magnetization has been made on both S passivated and clean GaAs(100). It is confirmed that S passivation on the GaAs surface can effectively eliminate the magnetization deficiency previously attributed to interdiffusion of As into the Fe overlayer.
9 citations