A method is disclosed for the production of highly diffusive or absorptive metal surfaces. A dendritic crystal structure surface layer of metal is electrodeposited on a substrate, using a bipolar pulse plating technique. This metal surface layer may then be oxidized to provide a highly anti-reflective surface.

Method of forming electrodeposited anti-reflective surface coatings

The invention is directed to the use of copper as via and interconnect structures for an integrated circuit. The process in accordance with a preferred embodiment produces an interconnect layer of continuous copper with superior adhesion while requiring only a minimum number of steps for its production. Fabrication of an integrated circuit in accordance with a preferred embodiment of the invention begins with the formation of semiconductor devices on a silicon wafer substrate (100). Next, an intermetallic dielectric layer (IDL) is formed by materials such as silicon dioxide (SiO2), polymide, or silicon nitride over the devices. This step is followed by the laying of a diffusion barrier layer (104) on the IDL surface. The resulting product is then exposed to an electrochemical deposition or electroplating stage for the formation of a copper layer directly on top of the diffusion barrier layer. In accordance with a preferred embodiment of the invention, a variable voltage from a source (10) is applied in two different stages. The first stage produces nucleation of a high density of clusters and the second stage permits diffusion limited growth of the clusters so as to produce a continuous copper film layer.

Copper metallization structure and method of construction

Photovoltaic generator, comprised of photovoltaic amorphous lead dioxide with an oxygen to lead ratio in the range of 1.66 to 1.99, and having rectifying and ohmic junctions therewith. Said lead dioxide may be formed by electrodeposition on substrates, such as copper, nickel, stainless steel, carbon, brass, stannic oxide, indium oxide, and gold plated copper or brass, and generally provides an ohmic junction with the substrate. A rectifying photovoltaic junction of the Schottky barrier type is formed by overcoating the lead oxide with one or more of an evaporated, sputtered or ion plated film of copper, aluminum, Inconel 1 , nickel, gold, platinum, palladium, nickel oxide, titanium, titanium oxide, and copper oxide.

Amorphous lead dioxide photovoltaic generator

Substrate coated with highly diffusive metal surface layer

Un organe de glissement comprend une couche de surface (3) dotee d'une surface de glissement (3a) destinee a un organe d'accouplement. La couche de surface comporte une pluralite de saillies (5) en forme de pyramide, faisant saillie hors d'un plan imaginaire (B) s'etendant sur la surface de glissement, de maniere a definir la surface de glissement. La proportion de l'aire A des saillies en forme de pyramide presente dans la surfaces de glissement est situee dans une plage A >= 50 %. L'angle d'inclinaison theta de la saillie en forme de pyramide formee par une ligne (a3) passant par son sommet (a1) et la partie centrale (a2) de la surface de base, par rapport a une ligne de reference (a4) perpendiculaire au plan imaginaire est situe dans une plage comprise entre 0degre et 30degre .

Organe de glissement.

Solar energy collector surface, the effectiveness of which as a collector is relatively independent of incident angle, comprises a textured surface of lead dioxide electrodeposited in such a manner to produce a multiplicity of upwardly protruding platelets. The electrodeposition technique comprises an initial nucleation stage in which a relatively high overpotential is applied for a short period of time and a subsequent oriented growth stage in which a lower overpotential is applied for a longer period of time than in the first stage.

Ferenc J. Schmidt

Papers

Process for the electrolytic formation of lead dioxide solar absorption coating