Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Semiconductor processing system and methods using capacitively coupled plasma

An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

Semiconductor processing systems having multiple plasma configurations

A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Methods for etch of metal and metal-oxide films

A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Methods for etch of sin films

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Processing systems and methods for halide scavenging

A method for the plasma-free etching of silicon using the etching gas ClF 3 or XeF 2 and its use are provided. The silicon is provided having one or more areas to be etched as a layer on the substrate or as the substrate material itself. The silicon is converted into the mixed semiconductor SiGe by introducing germanium and is etched by supplying the etching gas ClF 3 or XeF 2 . The introduction of germanium and the supply of the etching gas ClF 3 or XeF 2 may be performed at the same time or alternatingly. In particular, it is provided that the introduction of germanium be performed by implanting germanium ions in silicon.

Method for Accelerated Etching of Silicon

In this contribution we present the basic design of the new miniaturized high pressure sensor chip based on metal thin film technology (MFT). The steps of chip fabrication will be addressed, and compared with alternative processes. The product performance will be demonstrated by characterization data.

A small size high pressure sensor based on metal thin film technology

A micromechanical pressure sensor and a method for producing a micromechanical pressure sensor. This pressure sensor has at least one membrane and a measuring element situated on the membrane. A pressure applied at the membrane or a pressure differential applied at the different sides of the membrane results in deformation of the membrane. Simultaneous with the deformation of the membrane, the measuring element is subjected to elastic elongation and/or compression. In a piezo-sensitive component, such elastic elongation and/or compression generates a measured variable in the measuring element, which represents the applied pressure or the applied pressure differential at the membrane. It is provided in this context that the measuring element have at least partially a NiCr(Si) layer. Due to an at least partial crystallization in the production of the micromechanical pressure sensor, this NiCr(Si) layer has more advantageous piezoelectrical characteristics than an amorphous NiCr(Si) layer.

Micromechanical high-pressure sensor

A method and a device with the aid of which a substrate is electrochemically machined, material being removed from the surface of a conductive substrate with the aid of an also conductive tool. The removal takes place as a function of the surface structure which is incorporated into the tool. The core of the present invention is that the substrate and the tool are moved toward one another during the electrochemical etching process. However, it may alternatively also be provided that either the substrate or the tool is locally stationary, while only the counterpart is moved. In a particularly preferred embodiment of the present invention, only the tool is moved toward the substrate.

Method and device for electrochemical machining of substrates

Process for plasma-free etching of silicon (Si) uses an etching gas carbon trifluoride (CF3) (15) or xenon difluoride (XeF2) where the Si has one or more regions (20) to be etched as a layer on a substrate or on a substrate (1) itself. The Si is converted to a mixed semiconductor silicon germanium (SiGe) (40) by introduction of germanium (Ge) (30,35) and is etched by addition of CF3 or XeF2.

Process for plasma-free etching of silicon with etching gas useful in production of deep structures such as through holes or troughs where silicon has one or more regions to be etched as layer on substrate or on substrate itself

Frank Klopf

Papers

Method for Accelerated Etching of Silicon

A small size high pressure sensor based on metal thin film technology

Micromechanical high-pressure sensor

Method and device for electrochemical machining of substrates

Process for plasma-free etching of silicon with etching gas useful in production of deep structures such as through holes or troughs where silicon has one or more regions to be etched as layer on substrate or on substrate itself