F
Freidoon Mehrad
Researcher at Texas Instruments
Publications - 66
Citations - 643
Freidoon Mehrad is an academic researcher from Texas Instruments. The author has contributed to research in topics: Gate oxide & Layer (electronics). The author has an hindex of 13, co-authored 66 publications receiving 642 citations.
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Patent
Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
TL;DR: In this paper, a cap-annealing process that improves channel electron mobility without substantially degrading PMOS transistor devices is proposed, which uses an oxide/nitride composite cap to alter the active dopant profile across the channel regions.
Patent
Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device
TL;DR: In this paper, a method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related devices, is described, where a gate stack consisting of a first poly-silicon layer, a first nitride layer, and a second poly-silicon layer is formed over an active region in the semiconductor substrate adjacent to the gate stack.
Patent
Extended-life method for soft-programming floating-gate memory cells
TL;DR: In this article, an extended-life method for soft-programming at least one floating gate memory cell (10) includes connecting the substrate and the source (11) to a reference voltage, then applying to the control gate (13) a softprogramming voltage being between thirty and sixty percent of the voltage used to hard-program the cell.
Patent
Nonvolatile memory cell with P-N junction formed in polysilicon floating gate
TL;DR: An integrated circuit memory cell (10) is formed with a P-N junction polycrystalline floating gate (13) with a lightly boron doped on the source side (13B) and a heavily arsenic or phosphorous doped (13A) plus the channel region (Ch) as mentioned in this paper.
Patent
Channel-stop process for use with thick-field isolation regions in triple-well structures
TL;DR: The split-implant procedure results in much wider process variation windows for the thick-field isolation regions (23), process variations include oxide thickness of grown oxide, implant energy/dose and reduced thickness caused by wet de-glazing steps.