A charge coupled device is fabricated from a monocrystalline semiconductor-on-insulator (SOI) composite structure.

SOI methods and apparatus

A highly-efficient thermal inkjet printhead The printhead includes a primary layer of polycrystalline silicon (preferably doped) having at least one portion thereof which functions as an ink expulsion resistor Positioned over and above the primary layer is a secondary layer of material having at least one section produced from a selected metal silicide compound and at least another section fabricated from undoped polycrystalline silicon The metal silicide-containing section functions as an interconnect structure and is operatively connected to the resistor in the primary layer (which is positioned beneath the secondary layer) The undoped polycrystalline silicon section is at least partially aligned over and above the resistor As a result, the resistor is “buried” beneath the secondary layer and the various portions thereof This system provides improved reliability, greater dimensional simplicity, optimized electrical/thermal properties, and superior versatility

Thermal inkjet printhead and high-efficiency polycrystalline silicon resistor system for use therein

Silicon-on-insulator by graphoepitaxy and zone-melting recrystallization of patterned films

The annealing of semiconductors is of critical importance for successful electronic device fabrication. The present review surveys the new field of transient annealing and covers all timescales below those available with the conventional furnace. The work outlined includes the use of techniques which rely upon transient energy deposition in semiconductors from laser, electron beam, ion beam and other radiant sources. The many advances which have been achieved using these transient annealing methods in both fundamental and applied areas of physics are described.

http://iopscience.iop.org/article/10.1088/0034-4885/48/8/002/pdf

Transient annealing of semiconductors by laser, electron beam and radiant heating techniques

Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising strips of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.

Process for producing single crystal semiconductor layer and semiconductor device produced by said process

The selective annealing technique (laser annealing under a patterned antireflecting coating) has been successfully applied to the growth of very large (20×400 μm) silicon single crystals on SiO2. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.

Use of selective annealing for growing very large grain silicon on insulator films

Test transistors with gate lengths ranging from 10 to 4 µm were made in laser-recrystallized silicon on insulator films. A capping layer of patterned antireflecting stripes of Si 3 N 4 was used to grow large single-crystals of silicon. MOS transistors show good electrical characteristics and a surface mobility up to 650 cm2/V.s for electrons. With the exception of the recrystallization procedure, the wafers followed a fully standard NMOS process, including the growth of a LOCOS field oxide.

https://hal.archives-ouvertes.fr/jpa-00223144/document

Transistors made in single-crystal SOI films

The selective annealing technique (laser annealing under patterned antireflecting coating) has been successfully applied to the growth of very large (20 µm × 3000 µm) silicon single crystals. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.

The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films

Test transistors with gate lengths ranging from 10 to 4 µm were made in laser-recrystallized silicon on insulator films. A capping layer of patterned antireflecting stripes of Si3N4was used to grow large single-crystals of silicon. MOS transistors show good electrical characteristics and a surface mobility up to 650 cm2/V.s for electrons. With the exception of the recrystallization procedure, the wafers followed a fully standard NMOS process, including the growth of a LOCOS field oxide.

G. Auvert

Papers

Use of selective annealing for growing very large grain silicon on insulator films

Transistors made in single-crystal SOI films

The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films

Transistors made in single-crystal soi films

The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films : A-6: SILICON CRYSTALS