Publisher Summary A refractive index can be increased by ion implantation by changes in density and structure, by the addition of high-polarizability impurity ions, by a reduction of the plasma effect that increases the index and that is most important in the wavelength region far from the energy gap, and by absorption changing in the index in the region of the gap, that is, via the Kramers–Kronig relation. This chapter discusses the optical properties of implanted semiconductors, electrooptic components formed by ion implantation, general principles that determine most luminescent systems, effects of implantation temperature, luminescence centers in LiF-Mg-Ti radiation dosimeters, and use of line spectra in defect studies. In the LiF system, the luminescence bands are broad, and if alternative versions of the same complex exist, they cannot be resolved from the spectra. The addition, by implantation, of ions with incomplete inner electron shells opens up new possibilities as the lattice distortions of the free-ion energy levels are strongly perturbed by the defects in the neighborhood of the ion.

Optical Effects of Ion Implantation

Optical Filter Design and Analysis

A new coupled mode formulation for parallel dielectric waveguides is described. The results apply to any guided modes (TE, TM, or hybrid) in waveguides of arbitrary cross-section, dissimilar index, and nonidentical shape. Additional index perturbations not included within the waveguides are encompassed by the theory. Propagation constants and mode patterns for the coupled modes computed according to this theory are shown to agree very well with numerical solutions for the system modes when the latter can be determined. Moreover, the new results are more accurate than those obtained from prior coupled mode formulations. It is shown that even for Iossless guides the coupling coefficients from waveguide "b" to "a" and from "a" to "b," described by k ab and k ba respectively, are not related by their complex conjugates if the guides are not identical.

Coupled mode theory of parallel waveguides

Waveguiding of surface plasmon-polaritons (SPPs) by a dielectric ridge placed on a metal surface is analyzed using the effective-index method (EIM) and the finite element method (FEM). Main characteristics of these dielectric-loaded SPP waveguide (DLSPPW) structures, i.e., the mode effective index, confinement, and propagation length, are calculated at the telecom wavelength $\ensuremath{\lambda}=1.55\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$ for different widths and thicknesses of a polymer ridge (with the refractive index of 1.535) placed on a gold film surface. The condition for single-mode guiding is investigated using the EIM, and it is found that single-mode DLSPPW guiding can be realized for ridge thicknesses smaller than $\ensuremath{\sim}630\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ and widths below $\ensuremath{\sim}655\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ (when decreasing the ridge thickness, the ridge width suitable for single-mode guiding increases). It is also established that, in contrast to the usual trade-off, the DLSPPW mode lateral confinement can be improved simultaneously with the increase in the mode propagation length by choosing the appropriate ridge thickness. The accuracy of the EIM is evaluated by comparing the computed mode characteristics with those obtained with the FEM and found rather good for the modes being far from cutoff.

Theoretical analysis of dielectric-loaded surface plasmon-polariton waveguides

Part I. Silicon Photonics - Introduction: 1. Fabless Silicon Photonics: 1.1 Introduction 1.2 Silicon photonics - the next fabless semiconductor industry 1.3 Applications 1.4 Technical challenges and the state of the art 1.5 Opportunities 2. Modelling and Design Approaches: 2.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modelling 2.6 Photonic Circuit Modelling 2.7 Physical Layout 2.8 Software Tools Integration Part II. Silicon Photonics - Passive Components: 3. Optical Materials and Waveguides: 3.1 Silicon-on-Insulator 3.2 Waveguides 3.3 Bent waveguides 3.4 Code Listings 3.5 Problems 4. Fundamental Building Blocks: 4.1 Directional couplers 4.2 Y-Branch 4.3 Mach-Zehnder Interferometer 4.4 Ring resonators 4.5 Waveguide Bragg Grating Filters 4.6 Code Listings 4.7 Problems 5. Optical I/O: 5.1 The challenge of optical coupling to silicon photonic chips 5.2 Grating Coupler 5.3 Edge Coupler 5.4 Polarization 5.5 Code Listings 5.6 Problems Part III. Silicon Photonics - Active Components: 6. Modulators: 6.1 Plasma Dispersion E 6.2 PN Junction Phase Shifter 6.3 Micro-ring Modulators 6.4 Forward-biased PIN Junction 6.5 Active Tuning 6.6 Thermo-Optic Switch 6.7 Code Listings 6.8 Problems 7. Detectors: 7.1 Performance Parameters 7.2 Fabrication 7.3 Types of detectors 7.4 Design Considerations 7.5 Detector modelling 7.5.2 Electronic Simulations 7.6 Code Listings 7.7 Problems 8. Lasers: 8.1 External Lasers 8.2 Laser Modelling 8.3 Co-Packaging 8.4 Hybrid Silicon Lasers 8.5 Monolithic Lasers 8.6 Alternative Light Sources 8.7 Problems Part IV. Silicon Photonics - System Design: 9. Photonic Circuit Modelling: 9.1 Need for photonic circuit modelling 9.2 Components for System Design 9.3 Compact Models 9.4 Directional Coupler - Compact Model 9.5 Ring Modulator - Circuit Model 9.6 Grating Coupler - S Parameters 9.7 Code Listings 10. Tools and Techniques: 10.1 Process Design Kit (PDK) 10.2 Mask Layout 11. Fabrication: 11.1 Fabrication Non-Uniformity 11.2 Problems 12. Testing and Packaging: 12.1 Electrical and Optical Interfacing 12.2 Automated Optical Probe Stations 12.3 Design for Test 13. Silicon Photonic System Example: 13.1 Wavelength Division Multiplexed Transmitter.

Silicon Photonics Design: From Devices to Systems

The effective index method for calculating waveguide mode dispersion is reviewed and applied to uniform rectangular optical waveguides with both small and large index differences. The results are shown to be at least as accurate as other approximate techniques. The effective index method is then applied to channel waveguides assuming 1-D and 2-D diffusion. Channel waveguides without sideways diffusion are shown to be described by the method using a normalized notation and previously published universal dispersion curves. Two-dimensional diffusion theory is applied to treat the case of isotropic sideways diffusion. A new, normalized, 1-D universal chart is obtained which in conjunction with previous results defines waveguide mode dispersion in isotropically diffused 2-D channels.

G B Hocker

Papers

Mode dispersion in diffused channel waveguides by the effective index method