This review provides numerical and graphical information about many (but by no means all) of the physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material. The emphasis is on properties of GaAs itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage. The geometry of the sphalerite lattice and of the first Brillouin zone of reciprocal space are used to pave the way for material concerning elastic moduli, speeds of sound, and phonon dispersion curves. A section on thermal properties includes material on the phase diagram and liquidus curve, thermal expansion coefficient as a function of temperature, specific heat and equivalent Debye temperature behavior, and thermal conduction. The discussion of optical properties focusses on dispersion of the dielectric constant from low frequencies [κ0(300)=12.85] through the reststrahlen range to the intrinsic edge, and on the ass...

Semiconducting and other major properties of gallium arsenide

Photonic bandgap crystals can reflect light for any direction of propagation in specific wavelength ranges1,2,3. This property, which can be used to confine, manipulate and guide photons, should allow the creation of all-optical integrated circuits. To achieve this goal, conventional semiconductor nanofabrication techniques have been adapted to make photonic crystals4,5,6,7,8,9. A potentially simpler and cheaper approach for creating three-dimensional periodic structures is the natural assembly of colloidal microspheres10,11,12,13,14,15. However, this approach yields irregular, polycrystalline photonic crystals that are difficult to incorporate into a device. More importantly, it leads to many structural defects that can destroy the photonic bandgap16,17. Here we show that by assembling a thin layer of colloidal spheres on a silicon substrate, we can obtain planar, single-crystalline silicon photonic crystals that have defect densities sufficiently low that the bandgap survives. As expected from theory, we observe unity reflectance in two crystalline directions of our photonic crystals around a wavelength of 1.3 micrometres. We also show that additional fabrication steps, intentional doping and patterning, can be performed, so demonstrating the potential for specific device applications.

On-chip natural assembly of silicon photonic bandgap crystals

In recent years, we have seen a rapid progress in the field of graphene plasmonics, motivated by graphene's unique electrical and optical properties, tunabilty, long-lived collective excitation and their extreme light confinement. Here, we review the basic properties of graphene plasmons; their energy dispersion, localization and propagation, plasmon-phonon hybridization, lifetimes and damping pathways. The application space of graphene plasmonics lies in the technologically significant, but relatively unexploited terahertz to mid-infrared regime. We discuss emerging and potential applications, such as modulators, notch filters, polarizers, mid-infrared photodetectors, mid-infrared vibrational spectroscopy, among many others.

Graphene Plasmonics for Terahertz to Mid-Infrared Applications

The electron-phonon interaction in solids is important for many interesting properties of solids, among them the critical temperature of phonon-mediated superconductors, the effective electron mass in metals and semiconductors, and the carrier dynamics in semiconductors. Modern density-functional techniques have made it possible to perform $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ calculations of the electron-phonon interaction. This review explains these techniques and discusses their applications.

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Electron-phonon interactions from first principles

In recent years, we have seen a rapid progress in the field of graphene plasmonics, motivated by graphene’s unique electrical and optical properties, tunability, long-lived collective excitation and its extreme light confinement. Here, we review the basic properties of graphene plasmons: their energy dispersion, localization and propagation, plasmon–phonon hybridization, lifetimes and damping pathways. The application space of graphene plasmonics lies in the technologically significant, but relatively unexploited terahertz to mid-infrared regime. We discuss emerging and potential applications, such as modulators, notch filters, polarizers, mid-infrared photodetectors, and mid-infrared vibrational spectroscopy, among many others.

Graphene plasmonics for terahertz to mid-infrared applications

Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs

Identification of the fundamental vibrational modes of trigonal, α - monoclinic and amorphous selenium

First order Raman effect in III–V compounds

The available experimental data on PbS, PbSe, and PbTe indicate that the valence-and conduction-band extrema of these semi-conductors occur at the $L$ point of the Brillouin zone. The nearly-free-electron model predicts that the valence and conduction states in the vicinity of the forbidden gap at $L$ each consist of three simple spin-degenerate bands. These bands interact strongly with one another and are relatively well isolated from other bands at $L$. The forms of the dispersion relations, $E(\mathrm{k})$, for these bands are determined using their symmetry and k\ifmmode\cdot\else\textperiodcentered\fi{}P perturbation theory, and depend strongly on their order and spacing. The conduction-and valence-band extrema may be either anisotropic, with small, highly concentration-dependent transverse masses, as found in PbTe, or more nearly isotropic, as found in PbS. PbSe is thought to be an intermediate case. The theoretical variation with carrier concentration of the cyclotron masses and extremal cross-sectional areas of the Fermi surface is derived from k\ifmmode\cdot\else\textperiodcentered\fi{}P perturbation theory for a simple model of the band structure in PbTe. This model is found to be in good agreement with most of the transport data on PbTe. However, the $g$ factor for the valence band of PbTe, deduced from measurements of the Shubnikov-de Haas effect, is in definite disagreement with the predictions of the simple model, and a consideration of all six bands is necessary in order to obtain complete agreement with experiment. It appears that the band edge structure of PbSe and PbS are similar to that of PbTe with only a difference in the spacing of the various valence and conduction bands.

G. B. Wright

Papers

Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs

Identification of the fundamental vibrational modes of trigonal, α - monoclinic and amorphous selenium

First order Raman effect in III–V compounds

Band Edge Structure of PbS, PbSe, and PbTe

Raman Scattering from Donor and Acceptor Impurities in Silicon