G
G. Böhm
Researcher at Technische Universität München
Publications - 275
Citations - 7187
G. Böhm is an academic researcher from Technische Universität München. The author has contributed to research in topics: Laser & Quantum dot. The author has an hindex of 43, co-authored 275 publications receiving 6964 citations. Previous affiliations of G. Böhm include Ludwig Maximilian University of Munich.
Papers
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Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure.
TL;DR: Using a micron-sized photoluminescence (PL) probe enables us to study single islandlike interface defects of a thin GaAs/AlGaAs quantum well to discuss the spectra and their polarization properties on the basis of a discrete level scheme and the Pauli exclusion principle.
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Condensation of indirect excitons in coupled AlAs/GaAs quantum wells.
TL;DR: In this paper, the photoluminescence of excitons confined in an electric field tunable coupled AlAs/GaAs quantum well has been investigated at $T\ensuremath{\ge}350$ mK and magnetic fields
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Acoustically Driven Storage of Light in a Quantum Well
TL;DR: In this paper, the authors introduce a new way of band-gap engineering in which they expose a semiconductor quantum well of a direct gap material to a moving potential superlattice modulated in the plane of the well.
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Photoluminescence from a single GaAs/AlGaAs quantum dot
TL;DR: In this article, isolated single quantum dots of different size have been fabricated by laser-induced local interdiffusion of a GaAs/AlGaAs quantum-well structure, revealing a splitting and a blueshift, which depend systematically on dot size.
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Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures.
TL;DR: In this paper, the authors report about optical experiments on electric field tunable AlAs/GaAs coupled quantum well structures in the regime of the electric field induced ε-Gamma-X transition.