G
G. Brunthaler
Researcher at Johannes Kepler University of Linz
Publications - 12
Citations - 145
G. Brunthaler is an academic researcher from Johannes Kepler University of Linz. The author has contributed to research in topics: Magnetic field & Magnetoresistance. The author has an hindex of 5, co-authored 12 publications receiving 137 citations.
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Instability of the two-dimensional metallic phase to a parallel magnetic field
TL;DR: Magnetotransport studies of the unusual two-dimensional metallic phase in highmobility Si-MOS structures are reported in this article, where it is found that a magnetic field applied in the 2D plane suppresses the metallic state, causing the resistivity to increase dramatically.
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Lack of universal one-parameter scaling in the two- dimensional metallic regime
TL;DR: In this article, the two-dimensional metallic state is studied in a number of Si-MOS structures with peak mobilities varying by a factor of 8.5, and the data show a density dependence and disorder dependence of the major features of the scaling function and thus reveal the absence of universal one-parameter scaling over wide density range in the metallic regime.
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Breakdown of the anomalous two-dimensional metallic phase in a parallel magnetic field
TL;DR: In this paper, magnetotransport studies of the 2D metallic phase in high-mobility Si-MOSFETs have been carried out and it has been shown that the magnetic field applied in 2D plane suppresses the metallic state, causing the resistivity to increase dramatically by more than 30 times.
Journal ArticleDOI
Metal - insulator transition in Sb-doped short-period Si/SiGe superlattices
G. Brunthaler,Tomasz Dietl,Maciej Sawicki,G. Stöger,Jan Jaroszynski,A. Prinz,Friedrich Schäffler,G. Bauer +7 more
TL;DR: In this paper, the authors show that the Si/SiGe superlattice with homogeneous Sb doping concentrations of 4.5 and showed low-temperature magnetoconductivity effects which can be explained by single-electron backscattering and disorder-induced electron interaction for an anisotropic 3D case.
Journal ArticleDOI
Weak localization in the 2D metallic regime of Si‐MOS
G. Brunthaler,A. Prinz,Gerrit E. W. Bauer,V. M. Pudalov,E. M. Dizhur,Jan Jaroszynski,P. Głód,Tomasz Dietl +7 more
TL;DR: In this paper, the negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e2/h.