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G

G. Dorda

Researcher at Siemens

Publications -  2
Citations -  3

G. Dorda is an academic researcher from Siemens. The author has contributed to research in topics: Short-channel effect & Quantization (physics). The author has an hindex of 1, co-authored 2 publications receiving 3 citations.

Papers
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Journal ArticleDOI

1D analytical treatment of hot-electron effects in short-channel MOSFET's

TL;DR: In this paper, a simplified one dimensional model is studied to understand the transport phenomena of MOSFET's including the high field region, taking into account the average energy of electrons explicitly.
Journal ArticleDOI

Quantum effects in semiconductor components

TL;DR: The importance of quantum phenomena in semiconductor components, in particular in Si MOSFETs and GaAlAs/GaAs heterostructures, is discussed in this paper.