Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

https://www.mdpi.com/1424-8220/9/5/3491/pdf?view=inline

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

Fundamental studies on Bridgman growth of CdTe

Transmission Electron Microscopy of Halide Perovskite Materials and Devices

The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Dislocation cell structures in melt-grown semiconductor compound crystals

In-situ Sn-doped CdS thin films have been deposited successfully by the chemical bath deposition method using tartaric acid as a complexing agent. The films have been characterized by x-ray diffraction for structure determination, and microstructural parameters like crystallite size, rms strain and dislocation density have been calculated using x-ray line profile analysis. The composition of the films has been determined by x-ray photoelectron spectroscopy and energy dispersive x-ray analysis. Optical studies show that the band gap decreases significantly for pure CdS (2.39?eV) to 3.8?mol% of Sn-doped CdS (1.84?eV). A detailed PL study of CdS when doped with varying Sn concentrations has also been discussed. Temperature variation of the electrical resistivity of Sn-doped CdS thin films confirmed their semiconducting behaviour similar to the pure CdS. It also shows that doping of Sn in CdS makes a pronounced drop in the room temperature resistivity value from 1010?103???cm for pure CdS to 3.8?mol% of Sn-doped CdS, respectively.

https://iopscience.iop.org/article/10.1088/0022-3727/39/22/006/pdf

G.J. Russell

Papers

Structural defects in CdTe crystals grown by two different vapour phase techniques

Electrical properties of ZnxCd1-xSe

Twinning in CdTe

TEM studies of epitaxial CdTe and (Hg, Cd)Te grown by MOVPE on GaAs and CdTe substrates

A comparison of the structure of CdTe and (Hg, Cd)Te layers grown by MOVPE on {111}A and {111}B CdTe substrates