scispace - formally typeset
G

G.J. van der Kolk

Researcher at Philips

Publications -  26
Citations -  519

G.J. van der Kolk is an academic researcher from Philips. The author has contributed to research in topics: Amorphous solid & Vacancy defect. The author has an hindex of 9, co-authored 26 publications receiving 511 citations. Previous affiliations of G.J. van der Kolk include Delft University of Technology.

Papers
More filters
Journal ArticleDOI

Investigation on the formation of tungsten carbide in tungsten-containing diamond like carbon coatings

TL;DR: A series of tungsten-containing diamond-like carbon (Me-DLC) coatings have been produced by unbalanced magnetron sputtering using a Hauzer HTC-1000 production PVD system as discussed by the authors.
Journal ArticleDOI

On the composition range of amorphous binary transition metal alloys

TL;DR: In this article, a comparison is made between various models which predict the ability to form an amorphous phase with a relatively high crystallization temperature by rapid quenching or vapour deposition.
Journal ArticleDOI

Properties and characterization of multilayers of carbides and diamond-like carbon

TL;DR: In this paper, the effect of replacing the nano inclusions by a stack of extremely thin carbide layers, separated by carbon layers, is tested, and the results show a clear difference in wear and fatigue behavior when the multilayer structure was altered.
Journal ArticleDOI

Improving tribological properties of sputtered boron carbide coatings by process modifications

TL;DR: In this paper, a d.c. magnetron sputter process for the deposition of boron carbide coatings is described, and it is shown that by adding small amounts of a hydrocarbon reactive gas (in this case acetylene) the coefficient of friction can be reduced from 0.8 down to 0.2.
Journal ArticleDOI

Binding of helium to metallic impurities in tungsten - experiments and computer-simulations

TL;DR: In this article, a W(100) single crystal was implanted with low doses Ag, Cu, Mn, Cr, Al or In, and binding energies were found as high as 1.25 eV for one He atom.