G
G.J. van der Kolk
Researcher at Philips
Publications - 26
Citations - 519
G.J. van der Kolk is an academic researcher from Philips. The author has contributed to research in topics: Amorphous solid & Vacancy defect. The author has an hindex of 9, co-authored 26 publications receiving 511 citations. Previous affiliations of G.J. van der Kolk include Delft University of Technology.
Papers
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Investigation on the formation of tungsten carbide in tungsten-containing diamond like carbon coatings
TL;DR: A series of tungsten-containing diamond-like carbon (Me-DLC) coatings have been produced by unbalanced magnetron sputtering using a Hauzer HTC-1000 production PVD system as discussed by the authors.
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On the composition range of amorphous binary transition metal alloys
TL;DR: In this article, a comparison is made between various models which predict the ability to form an amorphous phase with a relatively high crystallization temperature by rapid quenching or vapour deposition.
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Properties and characterization of multilayers of carbides and diamond-like carbon
Christian G.C. Strondl,G.J. van der Kolk,T. Hurkmans,W. Fleischer,T. Trinh,N.J.M. Carvalho,J.Th.M. De Hosson +6 more
TL;DR: In this paper, the effect of replacing the nano inclusions by a stack of extremely thin carbide layers, separated by carbon layers, is tested, and the results show a clear difference in wear and fatigue behavior when the multilayer structure was altered.
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Improving tribological properties of sputtered boron carbide coatings by process modifications
TL;DR: In this paper, a d.c. magnetron sputter process for the deposition of boron carbide coatings is described, and it is shown that by adding small amounts of a hydrocarbon reactive gas (in this case acetylene) the coefficient of friction can be reduced from 0.8 down to 0.2.
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Binding of helium to metallic impurities in tungsten - experiments and computer-simulations
TL;DR: In this article, a W(100) single crystal was implanted with low doses Ag, Cu, Mn, Cr, Al or In, and binding energies were found as high as 1.25 eV for one He atom.