Recent development in 2D materials beyond graphene

A classification scheme for the different forms of implant-related damage which arise upon annealing consisting of five categories is presented. Category I damage is “subthreshold” damage or that which results prior to the formation of an amorphous layer. If the dose is increased sufficiently to result in the formation of an amorphous layer then the defects which form beyond the amorphous/crystalline (a/c) interface are classified as category II (“end of range”) damage. Category III defects are associated with the solid phase epitaxial growth of the amorphous layer. The most common forms of this damage are microtwins, hairpin dislocations and segregation related defects. It is possible to produce a buried amorphous layer upon implantation, If this occurs, then the defects which form when the two a/c interfaces meet are termed category IV (“clamshell”, “zipper”) defects. Finally, category V defects arise from exceeding the solid solubility of the implanted species in the substrate at the annealing temperature. These defects are most often precipitates or dislocation loops.

A systematic analysis of defects in ion-implanted silicon

A review is presented of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon. After a general overview of the system ‘‘oxygen in silicon,’’ the thermodynamics and the kinetics of the precipitate formation are treated in detail, with major emphasis on the phenomenology; subsequently, the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results. Finally, the possible influence of oxygen precipitation on technological applications is stressed, with particular attention to recent results regarding device yield. Actually, the essential novelty of this review rests on the attempt to give an extended picture of what has been recently clarified by means of highly sophisticated diagnostic methods and of the influence of precipitation on the properties of semiconductor devices.

Oxygen precipitation in silicon

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. A number of theoretical calculations and experiments were designed to provide a better understanding of the mechanisms behind the crystal-to-amorphous transition in Si. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this paper we will describe the most significant experimental observations related to the ion-beam-induced amorphization in Si and the models that have been developed to describe the process. Amorphous Si formation by ion implantation is the result of a critical balance between the damage generation and its annihilation. Implantation cascades generate different damage configurations going from isolated point defects and point defect clusters in essentially ...

https://www.ele.uva.es/~mmm/papers/2004_Pelaz_JAP_96.pdf

Ion-beam-induced amorphization and recrystallization in silicon

The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered.

https://digital.library.unt.edu/ark:/67531/metadc702553/m2/1/high_res_d/753385.pdf

Mechanisms of transition-metal gettering in silicon

Transmission electron microscope examinations performed on liquid‐phase epitaxial GaInAsP layers grown on (001) InP substrates showed a coarse tweed structure (∼150‐nm scale) and a fine granular structure (∼15‐nm scale). Transmission electron diffraction patterns revealed main spots with associated satellite spots, indicating the presence of periodic variations in lattice parameter along the [100] and [010] directions and of wavelength corresponding to the fine granular structure. The particular behavior depended on the alloy layer composition. Both structures are attributed to alloy clustering arising from spinodal decomposition.

Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers

Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

Transmission electron diffraction (TED) was used to observe extra diffraction spots in the TED patterns of molecular beam epitaxial GaAs1−y Sby layers with y=0.25, 0.50, and 0.71 grown at 520 °C on (001) GaAs substrates. Half‐order diffraction spots in the TED patterns indicated ordering on the (111) and (111) planes of the Group V sublattice, and streaks with subsidiary spots indicated a modulation in the [110] direction with a periodicity of ∼4d110 . Streaks in the [001] direction indicated monolayer disruptions of the {111} ordering and the [110] modulation in the [001] direction. As the composition parameter y varied, there were progressive changes in the {111} ordering, the [110] modulation, and the [001] disruptions, and these correlated with corresponding changes in the reconstruction of the dangling bonds at the growing layer surface, as determined by reflection high‐energy electron diffraction. A model is proposed to explain the observed effects in terms of ordered atomic arrangements of the Gr...

Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−ySby layers: Possible relationship to surface reconstruction occurring during layer growth

G. R. Booker

Papers

Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers

Mechanism for CuPt-type ordering in mixed III–V epitaxial layers

Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−ySby layers: Possible relationship to surface reconstruction occurring during layer growth

The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques

Nature, origin and effect of dislocations in epitaxial semiconductor layers