The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

Artificially engineered metamaterials are now demonstrating unprecedented electromagnetic properties that cannot be obtained with naturally occurring materials. In particular, they provide a route to creating materials that possess a negative refractive index and offer exciting new prospects for manipulating light. This review describes the recent progress made in creating nanostructured metamaterials with a negative index at optical wavelengths, and discusses some of the devices that could result from these new materials.

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Optical negative-index metamaterials

Two-photon excitation provides a means of activating chemical or physical processes with high spatial resolution in three dimensions and has made possible the development of three-dimensional fluorescence imaging, optical data storage, and lithographic microfabrication. These applications take advantage of the fact that the two-photon absorption probability depends quadratically on intensity, so under tight-focusing conditions, the absorption is confined at the focus to a volume of order λ3 (where λ is the laser wavelength). Any subsequent process, such as fluorescence or a photoinduced chemical reaction, is also localized in this small volume. Although three-dimensional data storage and microfabrication have been illustrated using two-photon-initiated polymerization of resins incorporating conventional ultraviolet-absorbing initiators, such photopolymer systems exhibit low photosensitivity as the initiators have small two-photon absorption cross-sections (δ). Consequently, this approach requires high laser power, and its widespread use remains impractical. Here we report on a class of π;-conjugated compounds that exhibit large δ (as high as 1, 250 × 10−50 cm4 s per photon) and enhanced two-photon sensitivity relative to ultraviolet initiators. Two-photon excitable resins based on these new initiators have been developed and used to demonstrate a scheme for three-dimensional data storage which permits fluorescent and refractive read-out, and the fabrication of three-dimensional micro-optical and micromechanical structures, including photonic-bandgap-type structures.

Two-photon polymerization initiators for three-dimensional optical data storage and microfabrication

Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation. Chip-scale lithium niobate electro-optic modulators that rapidly convert electrical to optical signals and use CMOS-compatible voltages could prove useful in optical communication networks, microwave photonic systems and photonic computation.

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

A wireless communication system with a maximum data rate of 100 Gbit s−1 over 20 m is demonstrated using a carrier frequency of 237.5 GHz. The photonic schemes used to generate the signal carrier and local oscillator are described, as is the fast photodetector used as a mixer for data extraction.

Wireless sub-THz communication system with high data rate

We present and experimentally validate self-collimation in planar photonic crystals as a new means of achieving structureless confinement of light in optical devices. We demonstrate the ability to arbitrarily route light by exploiting the dispersive characteristics of the photonic crystal. Propagation loss as low as 2.17 dB/mm is observed, and proposed applications of these devices are presented.

Dispersion-based optical routing in photonic crystals.

Researchers use sideband injection-locked lasers to generate low-noise, high-frequency radio signals that can be tuned over the range of 0.5–110 GHz. This technique is amenable to compact integration and, in principle, operation at even higher frequencies.

Radiofrequency signal-generation system with over seven octaves of continuous tuning

In this paper, we report on the development of the self-collimation phenomenon in photonic crystal structures for integrated optics applications. In addition, detailed numerical analysis, design procedures, fabrication and characterization techniques are included. Applications presented in this paper include: channelless waveguiding, orthogonal bending of light, tunable beam splitter, all-optical analog-to-digital converter, reconfigurable optical switch, chemical/gas sensor and a three-dimensional optical interconnect bus.

http://iopscience.iop.org/article/10.1088/0022-3727/40/9/S04/pdf

Self-collimation in photonic crystal structures: a new paradigm for applications and device development

We experimentally demonstrate subwavelength resolution imaging at microwave frequencies by a three-dimensional (3D) photonic-crystal flat lens using full 3D negative refraction. The photonic crystal was fabricated in a layer-by-layer process. A subwavelength pinhole source and a dipole detector were employed for the measurement. By point-by-point scanning, we obtained the image of the pinhole source shown in both amplitude and phase, which demonstrated the imaging mechanism and subwavelength feature size in all three dimensions. An image of two pinhole sources with subwavelength spacing showed two resolved spots, which further verified subwavelength resolution.

Three-Dimensional Subwavelength Imaging by a Photonic-Crystal Flat Lens Using Negative Refraction at Microwave Frequencies

In this paper we address a significant limitation of silicon as an optical material, namely, the upper bound of its potential modulation frequency. This arises due to finite carrier mobility, which fundamentally limits the frequency response of all-silicon modulators to about 60 GHz. To overcome this limitation, another material must be integrated with silicon to provide increased operational bandwidths. Accordingly, this paper proposes and demonstrates the integration of a thin LiNbO3 device layer with silicon and a novel tuning process that matches the propagation velocities between the propagating radio-frequency (RF) and optical waves. The resulting lithium niobate on silicon (LiNOS) modulator is demonstrated to operate from DC to 110 GHz.

Garrett J. Schneider

Papers

Dispersion-based optical routing in photonic crystals.

Radiofrequency signal-generation system with over seven octaves of continuous tuning

Self-collimation in photonic crystal structures: a new paradigm for applications and device development

Three-Dimensional Subwavelength Imaging by a Photonic-Crystal Flat Lens Using Negative Refraction at Microwave Frequencies

110 GHz CMOS compatible thin film LiNbO3 modulator on silicon.