In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Method of Manufacturing a Semiconductor Device

Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200Å, thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.

Method of fabricating a semiconductor device

A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.

Semiconductor device and process for fabricating the same

PURPOSE:To obtain a flat polycrystalline silicon gate insulating film interface having a few interfacial levels by a method wherein, after a silicon film having amorphous silicon as the main component has been formed, a heat treatment is conducted at a low temperature in an oxidizing atmosphere for the purpose of improving crystallizability and the formation of thermally oxided film on the surface of the silicon film. CONSTITUTION:A silicon film 2 having amorphous silicon as the main compo nent is formed on a glass substrate 1, then the surface of the silicon film 2 is oxidized, the crystallizability of the silicon film 2 is enhanced and a thermally oxided film 31 is formed by conducting a heat treatment at 600 deg.C. Then, the polycrystalline silicon film 2 is insularly etched together with the oxide film 31 by selectively masking the oxide film 31, and then the second layer of an oxide film 32 is deposited on the oxide film 31. Lastly, a gate shape is formed by selectively etching the oxide films 31 and 32. As a result, a clean interface having a few interfacial levels can be obtained, the interface of the polycrystalline silicon film and the oxide film is formed into flat shape having few recesses and projections, and the oxide film can also be formed to be uni form in thickness.

Genshirou Kawachi

Papers

Manufacture of thin film semiconductor device