Patent
Manufacture of thin film semiconductor device
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TLDR
In this paper, a flat polycrystalline silicon gate insulating film interface has been obtained by a method wherein, after a silicon film having amorphous silicon as the main component has been formed, a heat treatment is conducted at a low temperature in an oxidizing atmosphere for the purpose of improving crystallizability and the formation of thermally oxided film on the surface of the silicon film.Abstract:
PURPOSE:To obtain a flat polycrystalline silicon gate insulating film interface having a few interfacial levels by a method wherein, after a silicon film having amorphous silicon as the main component has been formed, a heat treatment is conducted at a low temperature in an oxidizing atmosphere for the purpose of improving crystallizability and the formation of thermally oxided film on the surface of the silicon film. CONSTITUTION:A silicon film 2 having amorphous silicon as the main compo nent is formed on a glass substrate 1, then the surface of the silicon film 2 is oxidized, the crystallizability of the silicon film 2 is enhanced and a thermally oxided film 31 is formed by conducting a heat treatment at 600 deg.C. Then, the polycrystalline silicon film 2 is insularly etched together with the oxide film 31 by selectively masking the oxide film 31, and then the second layer of an oxide film 32 is deposited on the oxide film 31. Lastly, a gate shape is formed by selectively etching the oxide films 31 and 32. As a result, a clean interface having a few interfacial levels can be obtained, the interface of the polycrystalline silicon film and the oxide film is formed into flat shape having few recesses and projections, and the oxide film can also be formed to be uni form in thickness.read more
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References
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Manufacture of semiconductor device
TL;DR: In this paper, the zinc system glass is introduced as the glass and the glass layer is covered with a silicon nitride film and an electrode forming portion of the surface of the substrate is processed by surface treatment.