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Showing papers by "Giorgio Vannini published in 1996"


Proceedings ArticleDOI
04 Jun 1996
TL;DR: In this article, the convergence properties of the modified Volterra-like modeling approach for non-linear dynamic systems in comparison with the classical VOLTERRA series representation are analyzed.
Abstract: The paper presents a theoretical study on the convergence properties of the new modified Volterra-like modeling approach for non-linear dynamic systems in comparison with the classical Volterra series representation. In particular, the assumptions which enable a single-fold non-linear convolution integral to be adopted also in the presence of strong non-linearities are pointed out. Experimental and simulation results which confirm the theoretical considerations are also provided.

18 citations


Proceedings ArticleDOI
08 Dec 1996
TL;DR: An approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics is introduced and the described non-linear model relates the geometrical, material and process parameters to the device electrical performance.
Abstract: The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non-linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD tool and it has been tested by comparison with large signal measurements.

5 citations


Proceedings ArticleDOI
13 May 1996
TL;DR: A previously proposed black-box modelling approach is applied for the large-signal performance prediction of microwave silicon bipolar transistors and experimental and simulation results confirming the accuracy of the model are provided.
Abstract: In the paper, a previously proposed black-box modelling approach is applied for the large-signal performance prediction of microwave silicon bipolar transistors. Experimental and simulation results confirming the accuracy of the model are provided. Preliminary considerations concerning parasitic de-embedding, which can improve the range of validity of the model, are also discussed.