Alberto Santarelli

TL;DR: In this article, an empirical modeling approach is presented to accurately predict deviations between static and dynamic drain current characteristics caused by dispersive effects in III-V devices operating at microwave frequencies.

TL;DR: In this article, a double-pulse technique for the dynamic characterization of GaN FETs is presented, which is shown to be not only isothermal but also corresponding to a fixed charge trapping state.

TL;DR: In this article, a scalable approach to the modeling of millimeter-wave field effect transistors is presented, based on the definition of a lumped extrinsic parasitic network, easily scalable with both the number of fingers and the finger widths.

TL;DR: A novel approach to distributed parasitic modeling is adopted for the very first time in association with a nonlinear electron device model, showing how an equivalent intrinsic device and a suitably defined distributed parasitic network can be accurately defined and modeled on the basis of standard measurements and easy electromagnetic simulations.

TL;DR: In this article, a new approach, using electromagnetic analysis, is proposed for field effect transistor model scaling and monolithic-microwave integrated-circuit (MMIC) design.