Methods and systems for determining a critical dimension and overlay of a specimen

Methods and systems for determining a critical dimension and a thin film characteristic of a specimen

Methods and systems for determining a presence of macro defects and overlay of a specimen

An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

Real-time in-line testing of semiconductor wafers

Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen

A method and apparatus are provided for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced form the other electrode by a nonconductive medium. In one implementation of the invention the nonconductive medium is air. A region of the surface of the specimen is illuminated with a beam of light of wavelengths shorter than that corresponding to the energy gap of the semiconductor material and which is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, the variable DC bias voltage varying between that corresponding to accumulation and that corresponding to deep depletion for the specimen. The intensity of the light beam is low enough and the speed at which the DC bias voltage is varied is fast enough such that no inversion layer is formed at the surface of the specimen. A signal is also provided corresponding to the total capacitance between the two electrodes during the DC bias voltage sweep. A signal is provided representing the ac photocurrent induced at the region of the specimen illuminated by the light beam. The intensity of the light beam and frequency of modulation of the light beam are selected such that the ac photocurrent is nearly proportional to the intensity of the light beam. The doping concentration profile is then determined using the ac photocurrent, the total capacitance and the DC bias voltage. The apparatus includes a sensor assembly having a sensor tip which is mounted on an air bearing assembly. The air bearing assembly is suspended from a housing by a pair of bellows. In use, air is supplied to the air bearing assembly through the bellows causing the bellows to expand, lowering the sensor tip until the air bearing action stops the expansion. In another implementation of the invention, a light beam is not employed and the doping concentration profile is determined using the total capacitance, the capacitance of air, the DC bias voltage and the area of the electrode spaced from the specimen information.

Method and apparatus for characterizing a specimen of semiconductor material

A method and apparatus are provided for determining the doping concentration profile of a specimen of semiconductor material. The apparatus includes a sensor assembly (21) having a sensor tip (22) which is mounted on an air bearing assembly (47). The air bearing assembly (47) is suspended from a housing (43) by a pair of bellows (81, 83). In use, air is supplied to the air bearing assembly (47) through the bellows (81, 83) causing the bellows (81, 83) to expand, lowering the sensor tip (21) until the air bearing action stops the expansion. In other implementations of the invention, photocurrent or photovoltage are not used and the doping concentration profile is determined using the total capacitance, the capacitance of air, the DC bias voltage and the area of the electrode spaced from the specimen information.

Semiconductor material characterizing method and apparatus

A method for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced from the other electrode by an air gap. A signal is provided corresponding to the total capacitance between the two electrodes. A region of the surface of the specimen is illuminated with a beam of light of wavelengths shorter than that corresponding to the energy gap of the semiconductor material and which is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, the variable bias voltage varying between that corresponding to accumulation and that corresponding to deep depletion for the specimen. The intensity of the light beam is low enough and the speed at which the DC bias voltage is varied is fast enough such that no inversion layer is formed at the surface of the specimen. A signal is provided representing the ac photocurrent induced at the region of the specimen illuminated by the light beam. The intensity of the light beam and frequency of modulation of the light beam are selected such that the ac photocurrent is nearly proportional to the intensity of the light beam. The doping concentration profile is then determined using the ac photocurrent, the total capacitance and the DC bias voltage.

Method utilizing a modulated light beam for determining characteristics such as the doping concentration profile of a specimen of semiconductor material

Glendon P. Marston

Papers

Method and apparatus for characterizing a specimen of semiconductor material

Semiconductor material characterizing method and apparatus

Method utilizing a modulated light beam for determining characteristics such as the doping concentration profile of a specimen of semiconductor material