High-sensitivity uncooled InAsSb photoconductors with long wavelength were successfully fabricated. The detectors are based on InAsSb epilayers with the thickness of 100 µm grown on InAs substrates by melt epitaxy (ME). Si optical lenses were set on the photoconductors without any antireflective coatings. At room temperature, the peak detectivity Dλp* (6.5 µm, 1200) reaches 5.3 ×109 cm Hz1/2 W-1 for InAsSb immersion photoconductors. The detectivity D* at the wavelength of 8 µm is 1.5 ×108 cm Hz1/2 W-1, and that at 9 µm is 1.0 ×107 cm Hz1/2 W-1. The excellent performance of the detectors indicates the potential applications for infrared (IR) detection and imaging at room temperature.

Uncooled InAsSb Photoconductors with Long Wavelength

We present the design, fabrication, and characterization of middle-wavelength infrared photodetector based on active InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb substrate. In this structure, the active absorption layer is sandwiched between thin quaternary p-type and n-type AlInAsSb layers and a heavily doped AlGaSb layer is introduced to reduce dark current. We observed good lattice matching between GaSb substrates and epitaxial layers by high-resolution X-ray diffraction. Photoluminescence (PL) spectrum at 13 K shows a full width at half maximum of ~ 29 meV, demonstrating good quality active absorption layers. The band gap energy of InAs0.9Sb0.1 is derived as ~ 0.322 eV at 0 K by Varshni fitting from PL spectra at different temperatures. A rather flat room-temperature responsivity of ~ 0.8–0.9 AW−1 over a wavelength range of ~ 2.1 µm is demonstrated without antireflection coating. A detectivity of 8.9 × 108 cm Hz1/2 W−1 at 3.5 µm for room-temperature operation is achieved under applied bias of − 0.5 V.

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InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy

Antimonide based III–V materials have been attracting great attention as they have wide applications covering photodetection, light source, photovoltaics and electronic devices. In this paper, we report on the structural and optical properties and photodetection performance of an InAsSb layer grown on a GaSb substrate by molecular beam epitaxy (MBE). An x-Ray diffraction (XRD) study shows that the Lattice-mismatch between the GaSb substrate and the InAsSb epitaxial layer is about 0.17% and the derived composition of Sb is about 0.09. Photoluminescence measurements at varied temperatures reveal that the energy band gap of the InAsSb material is about 0.33 eV and the luminescence peaks follow Bose–Einstein relation. The photoconductors fabricated based on the InAsSb/GaSb structure show spectral response ranging from NIR to MWIR range. They can work well at low voltage bias and the measured blackbody detectivitives are ~2.4 × 107 cmHz1/2W−1 and ~6.1 × 109 cmHz1/2W−1 at room temperature and 77 K, respectively.

https://iopscience.iop.org/article/10.1088/0031-8949/91/11/115801/pdf

InAs 0.91 Sb 0.09 photoconductor for near and middle infrared photodetection

Effect of the Sb content and the n− and p−GaSb(100) substrates on the physical and chemical properties of InSbxAs1-x alloys for mid-infrared applications: Analysis of surface, bulk and interface

InAsSb immersion photoconductors with a response wavelength range of 2–9 µm operated at room temperature were reported. The detectors are based on InAsSb single crystals grown on InAs substrates by melt epitaxy (ME). Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5×104 cm2 V-1 s-1 with carrier densities of (1–3)×1016 cm-3. The photoconductors were measured using a standard blackbody source at a temperature of 500 K and a modulation frequency of 800 Hz under an applied bias current of 10 mA. At 293 K, the blackbody detectivity Dbb* (500 K, 800) reaches (2–6)×108 cm Hz1/2 W-1, indicating the high sensitivity of the detectors and their potential detection applications.

High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature

High sensitivity uncooled InAsSb photoconductors with cutoff wavelengths longer than 8 mm were experimentally validated. The detectors were fabricated using InAs0.052Sb0.948 and InAs0.023Sb0.977 single crystals grown on InAs substrates by melt epitaxy (ME). The thickness of the epilayers was 50 mm. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 m. Peak detectivity Dλp* (6.5 mm, 1200 Hz) reached 5.4 × 109 cm Hz1/2 W-1 for InAs0.052Sb0.948 immersed detectors. The detectivity D* was 9.3 × 108 and 1.3 × 108 cm Hz1/2 W-1 at the wavelength of 8 and 9 mm respectively. The good performances of InAsSb detectors indicate the possible detection applications

Guang Hui Wu

Papers

High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature

Uncooled InAsSb Photoconductors with Long Wavelength

InAsSb Single Crystals and Photoconductors with Cutoff Wavelengths Longer than 8 µm