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Guiheng Wang
Researcher at Hefei University of Technology
Publications - 6
Citations - 283
Guiheng Wang is an academic researcher from Hefei University of Technology. The author has contributed to research in topics: Semiconductor & Field-effect transistor. The author has an hindex of 5, co-authored 6 publications receiving 192 citations.
Papers
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Journal ArticleDOI
Highly selective and sensitive sensor based on an organic electrochemical transistor for the detection of ascorbic acid.
Lijun Zhang,Guiheng Wang,Di Wu,Can Xiong,Lei Zheng,Yunsheng Ding,Hongbo Lu,Guobing Zhang,Longzhen Qiu +8 more
TL;DR: The combination of the amplification function of an OECT and the selective specificity of MIPs afforded a highly sensitive, selective OECT sensor, which exhibited excellent specific recognition ability to AA.
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Chirality detection of amino acid enantiomers by organic electrochemical transistor.
Lijun Zhang,Guiheng Wang,Can Xiong,Lei Zheng,Jian-Bo He,Yunsheng Ding,Hongbo Lu,Guobing Zhang,Kilwon Cho,Longzhen Qiu +9 more
TL;DR: The MIP films, which can specifically recognize and has an electrocatalytic effect on the oxidation of Trp and Tyr, together with the amplification function of an OECT, provide a highly sensitive and selective OECT biosensor.
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Organic Field-Effect Transistors with Macroporous Semiconductor Films as High-Performance Humidity Sensors
TL;DR: The results suggested that the sensitivity of the sensor was improved with increasing pore size within a certain range, and these sensitivity values are better than those obtained by other reported humidity sensors based on organic field-effect transistors.
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Tailoring Structure and Field-Effect Characteristics of Ultrathin Conjugated Polymer Films via Phase Separation
Feng Ge,Shiyu Wei,Zhen Liu,Guiheng Wang,Xiaohong Wang,Guobing Zhang,Hongbo Lu,Kilwon Cho,Longzhen Qiu +8 more
TL;DR: A phase-separation method has been developed to control the semiconductor thickness and molecular arrangement via the semiconducting/insulating polymer blend system, and the ultrathin films show high bias stability and weak decay after 24 days with a bottom-gate configuration.
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Flexible, Low-Voltage, and n-Type Infrared Organic Phototransistors with Enhanced Photosensitivity via Interface Trapping Effect
Guiheng Wang,Kaiqiang Huang,Zhen Liu,Yuchang Du,Xiaohong Wang,Hongbo Lu,Guobing Zhang,Longzhen Qiu +7 more
TL;DR: The outstanding performance of the NIR OPTs indicates that the development of wearable electronics is, indeed, possible, and the typical n-type transistor characteristics at a voltage below 5 V are exhibited.