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Guiheng Wang

Researcher at Hefei University of Technology

Publications -  6
Citations -  283

Guiheng Wang is an academic researcher from Hefei University of Technology. The author has contributed to research in topics: Semiconductor & Field-effect transistor. The author has an hindex of 5, co-authored 6 publications receiving 192 citations.

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Highly selective and sensitive sensor based on an organic electrochemical transistor for the detection of ascorbic acid.

TL;DR: The combination of the amplification function of an OECT and the selective specificity of MIPs afforded a highly sensitive, selective OECT sensor, which exhibited excellent specific recognition ability to AA.
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Chirality detection of amino acid enantiomers by organic electrochemical transistor.

TL;DR: The MIP films, which can specifically recognize and has an electrocatalytic effect on the oxidation of Trp and Tyr, together with the amplification function of an OECT, provide a highly sensitive and selective OECT biosensor.
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Organic Field-Effect Transistors with Macroporous Semiconductor Films as High-Performance Humidity Sensors

TL;DR: The results suggested that the sensitivity of the sensor was improved with increasing pore size within a certain range, and these sensitivity values are better than those obtained by other reported humidity sensors based on organic field-effect transistors.
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Tailoring Structure and Field-Effect Characteristics of Ultrathin Conjugated Polymer Films via Phase Separation

TL;DR: A phase-separation method has been developed to control the semiconductor thickness and molecular arrangement via the semiconducting/insulating polymer blend system, and the ultrathin films show high bias stability and weak decay after 24 days with a bottom-gate configuration.
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Flexible, Low-Voltage, and n-Type Infrared Organic Phototransistors with Enhanced Photosensitivity via Interface Trapping Effect

TL;DR: The outstanding performance of the NIR OPTs indicates that the development of wearable electronics is, indeed, possible, and the typical n-type transistor characteristics at a voltage below 5 V are exhibited.