Showing papers by "Guo-Jun Qi published in 2003"
TL;DR: In this article, a three-electrode, hybrid-aligned nematic (HAN) liquid crystal (LC) device for fast response applications is described, which is realized with both the turn-on and turn-off processes driven by an electric field.
Abstract: A new, three-electrode, hybrid-aligned nematic (HAN) liquid crystal (LC) device for fast response applications is described. The three-electrode configuration generates electric field horizontally and vertically which alternately turn the LC cell on and off. The fast response is realized with both the turn-on and turn-off processes driven by an electric field. The transmission and response time of such a LC device as a function of the rubbing angle were studied. A total response time (rise time plus fall time) of less than 2 ms was obtained for a non-optimized HAN LC cell with a cell gap of 6 µm. Such a device is promising for video and other applications where fast response is required.
30 citations
TL;DR: In this paper, in situ resistance measurement has been carried out to study the nickel-induced lateral crystallization process of amorphous silicon thin film with and without lateral electrical field enhancement.
Abstract: In situ resistance measurement has been carried out to study the nickel-induced lateral crystallization process of amorphous silicon thin film with and without lateral electrical field enhancement. In both cases, the resistance decays exponentially with annealing time. The decay behavior is strongly dependent on temperature and electric field. The field enhancement effect has been demonstrated by a field enhancement factor calculated from in situ resistance measurement results. This in situ resistance measurement method can potentially be used for monitoring metal-induced lateral crystallization processes of amorphous silicon.
2 citations
25 May 2003
TL;DR: A bias-adaptive voltage level shifter is proposed to remove the direct self-bias connection between the gate and the drain and to adjust the operating point at the output node, so as to achieve symmetric yet maximum positive and negative output swings.
Abstract: In the conventional cross-coupled CMOS magnetic field-effect transistor (MAGFET) pair, at least one MAGFET is self-biased. The output swing at the self-biased end is then inevitably limited to the threshold voltage of the self-biased MAGFET. This problem emerges for bipolar magnetic field sensing. In this paper, we propose a bias-adaptive voltage level shifter to remove the direct self-bias connection between the gate and the drain and to adjust the operating point at the output node, so as to achieve symmetric yet maximum positive and negative output swings. The improvements have been verified by HSPICE simulation.
1 citations
TL;DR: It is verified that aluminum can cause lateral crystallization of a-Si film and the resultant poly-Si films show preferred crystal orientation.
Abstract: This study is on a new approach for fabrication of poly-Si thin films. Aluminum-induced crystallization of a-Si film has been achieved by thermal annealing only at around 400 °C. The Experimental results reveal that the Al on top of a-Si arrangement has more evident effect in crystallization enhancement than that with Al under a-Si, and the resultant poly-Si films show preferred (400) crystal orientation. It is verified that aluminum can cause lateral crystallization of a-Si film. No preferred orientation was noticed from lateral crystallization samples.