GaSb-based quantum well (QW) laser diode, with emission wavelength ∼2 μm, integrated onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al2O3 bonding layer has been designed and analyzed. Prior to bonding, the fabricated Fabry–Perot GaSb QW laser worked under continuous wave operation at room temperature, with a low threshold current of 37 mA at the emission wavelength of 2019 nm, demonstrating high material quality. A tapered structure has been used for evanescent coupling of light from the GaSb laser to the underlying Si waveguide. Instead of using SiO2 for direct bonding or Benzocyclobutene for adhesive bonding, the use of Al2O3 to directly bond GaSb lasers onto SOI wafers is proposed. The optical mode distribution simulations by a beam propagation method software show that light can be coupled efficiently to the underlying Si waveguide through the tapered structure without compromise in optical coupling efficiency. Furthermore, there is a significant reduction (∼70%) in the total thermal resistance compared with the same structure using a SiO2 bonding layer. Our results suggest that the Al2O 3 bonding layer could be a promising candidate for III–V lasers integrated on SOI circuits, where thermal dissipation is very critical.

/pdf/design-and-analysis-of-2-mm-ingasb-gasb-quantum-well-lasers-2zlkytiiif.pdf

Design and Analysis of 2-μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al 2 O 3 Bonding Layer

The invention discloses a method for producing a very-long wave indium arsenide (InAs)/gallium antimonide (GaSb) second class superlattice infrared detector material, which comprises the step that: a P type doped GaSb buffer layer, a P type doped medium wave InAs/GaSb second class superlattice layer, a non-doped very-long wave InAs/GaSb second class superlattice layer, a N type doped medium wave InAs/GaSb second class superlattice layer and an N type doped InAs upper contact layer are sequentially grown on a semi-insulating GaSb substrate, so the very-long wave InAs/GaSb second class superlattice infrared detector material is obtained. After the method is utilized, because 'Sb-soak' and 'grow interruption' which are well designed are added in an interface design, the quality of the superlattice material is further improved.

Method for producing very-long wave indium arsenide (InAs)/gallium antimonide (GaSb) second class superlattice infrared detector material

The invention discloses an InSb/GaSb quantum dot structure apparatus. The InSb/GaSb quantum dot structure apparatus comprises a GaSb substrate (101) which is used for supporting a whole two-point material structure. An extension structure which grows on the GaSb substrate sequentially comprises a GaSb lower buffer layer (102), a lattice-matched AlGaInAsSb lower barrier layer (103), a GaSb upper buffer layer (104), an InSb quantum dot layer (105), a GaSb protective layer (106), a lattice-matched AlGaInAsSb upper barrier layer (107), and a GaSb covering layer (108). The invention further discloses an MBE growing method of the quantum dot structure apparatus. According to the InSb/GaSb quantum dot structure apparatus and the growing method, InSb quantum dots can be prepared on the GaSb substrate, and the InSb/GaSb quantum dot structure apparatus and the growing method are applied to the design and the extension growing of an active region structure of a semiconductor photoelectric device which emits single photons in a mid-infrared wave section.

InSb/GaSb quantum dot structure apparatus and growing method

The invention provides an infrared detector and a preparation method thereof, the infrared detector includes a substrate, A first electrode, a plurality of second electrodes and an absorption layer sequentially arranged on the substrate from bottom to top, a first barrier layer and a second barrier layer, the first electrode being connected to the substrate, the second barrier layer comprising a plurality of semiconductor layers arranged in an array, the plurality of semiconductor layers corresponding to the plurality of second electrodes one by one, each semiconductor layer being connected toa second electrode The preparation method comprises the following steps of: providing a substrate; An absorption layer, a first barrier layer and a second barrier layer are sequentially grown on thesubstrate from bottom to top Etching the second barrier layer to form a plurality of semiconductor layers arranged in an array; A first electrode is respectively deposited on a substrate, and a plurality of second electrodes are deposited on a plurality of semiconductor layers The infrared detector only etches the second barrier layer, realizes the electrical isolation of the device without destroying the absorption layer, simplifies the device process and improves the reliability of the device

Infrared detector and preparation method thereof

The invention discloses an interband cascade laser of a W-type active region structure. According to the laser, a lower InAs/AlSb limitation layer, a lower GsSb waveguide layer, a W-type active region, an upper GaSb waveguide layer, an upper InAs/AlSb limitation layer and an InAs contact layer are prepared on a GaSb substrate in sequence. The W-type active region is composed of an InAs/AlSb electron injection region, an InAs/AlSb hole injection region and an InAs/Ga InSb/AlSb/GaInSb/InAs W-type quantum well. The interband cascade laser is formed by combining the W-type active region structure (InAs/Ga InSb/AlSb/GaInSb/InAs) and an interband cascade laser structure. According to the interband cascade laser, gain of the active region and performance of the laser are improved by increasing electron and hole wave function overlap in the active region.

Interband cascade laser of W-type active region structure

The invention relates to an epitaxial growth method of a W type antimonide class II quantum well, which comprises the following steps: step 1) selecting a substrate; step 2) performing deoxidation and degasification treatment on the substrate, and observing the surface reconstruction; and step 3) sequentially growing a buffer layer, a W-structured class II quantum well active area with 10 cycles and a GaSb cover layer on the substrate

Epitaxial growth method of W type antimonide class II quantum well

2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.

Guofeng Song

Papers

Epitaxial growth method of W type antimonide class II quantum well

MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser