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Xing Junliang
Researcher at Chinese Academy of Sciences
Publications - 14
Citations - 70
Xing Junliang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Quantum well & Layer (electronics). The author has an hindex of 5, co-authored 14 publications receiving 67 citations. Previous affiliations of Xing Junliang include University of Science and Technology of China.
Papers
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Patent
InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof
Jiang Tongwei,Wei Xiang,Juan Wang,Xing Junliang,Wang Guowei,Xu Yingqiang,Ren Zhengwei,Zhenhong He,Niu Zhichuan +8 more
TL;DR: In this paper, an InAs/GaSb superlattice infrared photoelectric detector is presented, where InSb is respectively inserted into two interfaces of each super-attice period of the intrinsic absorption layer to form strained super-lattices, the stress between the super-latices and the substrate is effectively balanced, and accordingly the photoelectric performance of the detector is improved.
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Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection
TL;DR: In this paper, a complete fabrication process of InAs/GaSb type-II superlattice long-wavelength infrared photodiodes with band structure modelling, materials growth and device fabrication is reported.
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2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography
Cheng-Ao Yang,Cheng-Ao Yang,Yu Zhang,Yu Zhang,Yongping Liao,Yongping Liao,Xing Junliang,Xing Junliang,Si-Hang Wei,Si-Hang Wei,Li-Chun Zhang,Li-Chun Zhang,Yingqiang Xu,Yingqiang Xu,Haiqiao Ni,Haiqiao Ni,Zhichuan Niu,Zhichuan Niu +17 more
TL;DR: In this paper, a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process is presented.
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Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure
Juan Wang,Guowei Wang,Yingqiang Xu,Xing Junliang,Wei Xiang,Bao Tang,Yan Zhu,Zhengwei Ren,He Zhenhong,Zhichuan Niu +9 more
TL;DR: In this article, the InAs/AlSb QW structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates.
Journal ArticleDOI
Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density
Xing Junliang,Yu Zhang,Yongping Liao,Juan Wang,Wei Xiang,Yingqiang Xu,Guowei Wang,Zhengwei Ren,Zhichuan Niu +8 more
TL;DR: In this paper, a 2.4 μm InGaSb/AlGaAsSb type-I quantum-well laser diode is fabricated, which consists of three In0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al 0.98 waveguide layer.