Gustavo Avolio

TL;DR: In this article, the authors present a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices, and a large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.

TL;DR: In this article, a neural approach for extracting a multi-bias model of a gallium nitride high electron-mobility transistors including the dependence on the ambient temperature is presented.

TL;DR: In this paper, the authors analyzed the kink phenomenon in GaN HEMT technology with respect to temperature and bias conditions, and showed that the dependence of the KE on the operating condition should be mainly attributed to the transconductance, which plays a determinant role in the appearance of this effect.

TL;DR: In this paper, the authors present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT, with the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications.

TL;DR: In this article, the authors present an analysis of the propagation of measurement uncertainty in microwave transistor nonlinear models and evaluate the uncertainty by means of the polynomial chaos expansion (PCE) method.