The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping.

Controlling Molecular Doping in Organic Semiconductors

The electrical performance of doped semiconducting polymers is strongly governed by processing methods and underlying thin-film microstructure. We report on the influence of different doping methods (solution versus vapor) on the thermoelectric power factor (PF) of PBTTT molecularly p-doped with F n TCNQ (n = 2 or 4). The vapor-doped films have more than two orders of magnitude higher electronic conductivity (σ) relative to solution-doped films. On the basis of resonant soft x-ray scattering, vapor-doped samples are shown to have a large orientational correlation length (OCL) (that is, length scale of aligned backbones) that correlates to a high apparent charge carrier mobility (μ). The Seebeck coefficient (α) is largely independent of OCL. This reveals that, unlike σ, leveraging strategies to improve μ have a smaller impact on α. Our best-performing sample with the largest OCL, vapor-doped PBTTT:F4TCNQ thin film, has a σ of 670 S/cm and an α of 42 μV/K, which translates to a large PF of 120 μW m-1 K-2. In addition, despite the unfavorable offset for charge transfer, doping by F2TCNQ also leads to a large PF of 70 μW m-1 K-2, which reveals the potential utility of weak molecular dopants. Overall, our work introduces important general processing guidelines for the continued development of doped semiconducting polymers for thermoelectrics.

/pdf/morphology-controls-the-thermoelectric-power-factor-of-a-1fw026wz6m.pdf

Morphology controls the thermoelectric power factor of a doped semiconducting polymer

Conjugated polymer chains have many degrees of conformational freedom and interact weakly with each other, resulting in complex microstructures in the solid state. Understanding charge transport in such systems, which have amorphous and ordered phases exhibiting varying degrees of order, has proved difficult owing to the contribution of electronic processes at various length scales. The growing technological appeal of these semiconductors makes such fundamental knowledge extremely important for materials and process design. We propose a unified model of how charge carriers travel in conjugated polymer films. We show that in high-molecular-weight semiconducting polymers the limiting charge transport step is trapping caused by lattice disorder, and that short-range intermolecular aggregation is sufficient for efficient long-range charge transport. This generalization explains the seemingly contradicting high performance of recently reported, poorly ordered polymers and suggests molecular design strategies to further improve the performance of future generations of organic electronic materials.

http://absimage.aps.org/image/MAR14/MWS_MAR14-2013-020288.pdf

A general relationship between disorder, aggregation and charge transport in conjugated polymers

In this contribution, for the first time, the molecular n-doping of a donor-acceptor (D-A) copolymer achieving 200-fold enhancement of electrical conductivity by rationally tailoring the side chains without changing its D-A backbone is successfully improved. Instead of the traditional alkyl side chains for poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl](NDI)-alt-5,5'-(2,2'-bithiophene)} (N2200), polar triethylene glycol type side chains is utilized and a high electrical conductivity of 0.17 S cm-1 after doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine is achieved, which is the highest reported value for n-type D-A copolymers. Coarse-grained molecular dynamics simulations indicate that the polar side chains can significantly reduce the clustering of dopant molecules and favor the dispersion of the dopant in the host matrix as compared to the traditional alkyl side chains. Accordingly, intimate contact between the host and dopant molecules in the NDI-based copolymer with polar side chains facilitates molecular doping with increased doping efficiency and electrical conductivity. For the first time, a heterogeneous thermoelectric transport model for such a material is proposed, that is the percolation of charge carriers from conducting ordered regions through poorly conductive disordered regions, which provides pointers for further increase in the themoelectric properties of n-type D-A copolymers.

/pdf/enhancing-molecular-n-type-doping-of-donor-acceptor-5bidmeuhxf.pdf

Enhancing Molecular n-Type Doping of Donor-Acceptor Copolymers by Tailoring Side Chains.

Rational hole transport layer (HTL) material design is regarded as one of the most important approaches to improve the efficiency and stability of perovskite solar cells (PSCs). Herein, we investigate the effect of a widely spread p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) on the optical and electrical properties of conventional poly(3,4-ethylenedioxythiophene):poly-(styrene sulfonate) (PEDOT:PSS) HTLs, as well as the photovoltaic performance of the corresponding perovskite solar cells. Doping F4-TCNQ at a low concentration can efficiently adjust the electrical properties of the PEDOT:PSS film and lower the highest occupied molecular orbital (HOMO) level. As a result, the enhanced electrical conductivity and energetically favorable energy level alignment of the doped film allow efficient carrier transport from the perovskite absorber layer to the HTL. Finally, the PSCs with the F4-TCNQ doped HTL exhibited simultaneously increased short-circuit current (Jsc), open circuit voltage (Voc) and fill factor (FF). The highest power conversion efficiency (PCE) was notably improved from 13.30% (undoped) to 17.22% (0.30 wt% of F4-TCNQ doping), suggesting that the F4-TCNQ doped PEDOT:PSS film is an efficient HTL to achieve high performance perovskite solar cells.

Improved performance of inverted planar perovskite solar cells with F4-TCNQ doped PEDOT:PSS hole transport layers

Doping polymeric semiconductors often drastically reduces the solubility of the polymer, leading to difficulties in processing doped films. Here, we compare optical, electrical, and morphological properties of P3HT films doped with F4TCNQ, both from mixed solutions and using sequential solution processing with orthogonal solvents. We demonstrate that sequential doping occurs rapidly (<1 s), and that the film doping level can be precisely controlled by varying the concentration of the doping solution. Furthermore, the choice of sequential doping solvent controls whether dopant anions are included or excluded from polymer crystallites. Atomic force microscopy (AFM) reveals that sequential doping produces significantly more uniform films on the nanoscale than the mixed-solution method. In addition, we show that mixed-solution doping induces the formation of aggregates even at low doping levels, resulting in drastic changes to film morphology. Sequentially coated films show 3–15 times higher conductivities at a given doping level than solution-doped films, with sequentially doped films processed to exclude dopant anions from polymer crystallites showing the highest conductivities. We propose a mechanism for doping induced aggregation in which the shift of the polymer HOMO level upon aggregation couples ionization and solvation energies. To show that the methodology is widely applicable, we demonstrate that several different polymer:dopant systems can be prepared by sequential doping.

/pdf/comparison-of-solution-mixed-and-sequentially-processed-p3ht-tjynnvhy5x.pdf

Gwangwu Zhang

Papers

Comparison of solution-mixed and sequentially processed P3HT:F4TCNQ films: effect of doping-induced aggregation on film morphology