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H. F. Yang

Researcher at Chinese Academy of Sciences

Publications -  42
Citations -  530

H. F. Yang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Thin film & Curie temperature. The author has an hindex of 14, co-authored 42 publications receiving 477 citations. Previous affiliations of H. F. Yang include ShanghaiTech University.

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Electronic structure of single-crystalline NdO 0.5 F 0.5 BiS 2 studied by angle-resolved photoemission spectroscopy

TL;DR: In this article, the low-lying electronic structure of the single-crystalline BCS superconductor with angle-resolved photo-emission spectroscopy was studied.
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Reduction of tensile stress in GaN grown on Si(1 1 1) by inserting a low-temperature AlN interlayer

TL;DR: In this article, the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111) substrates is described, and it is demonstrated that, in addition to the lower growth temperature, growth of the AlN intra-layer under Al-rich conditions is a critical factor for crack free GAN growth, which leads to the reduction of tensile stress in the GaN epitaxial layers.
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Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

TL;DR: AlInGaN quaternary epilayers have been grown with various TMGa flows by metalorganic chemical vapor deposition to investigate the influence of growth rate on the structural and optical properties.
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Significant contribution of As 4 p orbitals to the low-lying electronic structure of the 112-type iron-based superconductor Ca 0.9 La 0.1 FeAs 2

TL;DR: In this article, a systematic polarization-dependent angle-resolved photoemission spectroscopy study of the three-dimensional electronic structure of the recently discovered 112-type iron-based superconductor was performed.
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Intrinsic tunneling spectroscopy of Bi 2 Sr 2 Ca Cu 2 O 8 + δ : The junction-size dependence of self-heating

TL;DR: In this article, the authors investigated the self-heating effect on intrinsic tunneling spectra (ITSs) using stacks of intrinsic Josephson junctions (IJJs) in near optimally doped crystals.