Nanotubes and semiconductor nanowires are of fundamental importance to the study of sizeand dimensionality-dependent chemical and physical phenomena. 1,2 How to rationally synthesize these 1-dimensional nanostructures has been a major challenge, although several strategies have been pursued recently. 3-16 For example, carbon nanotubes have been prepared via condensation of hot carbon plasmas in the presence of certain metals, although the real growth mechanism has been elusive. 3-5 Recently, semiconductor nanowires with different compositions have been successfully synthesized using either vapor 6-12 or solution-based methodologies. 13-16 One key feature of these syntheses is the promotion of anisotropic crystal growth using metal nanoparticles as catalysts. The growth mechanism has been extrapolated from the vapor -liquid-solid (VLS) mechanism which was proposed in the 1960s -1970s for large whisker growth, 17-19 although an oxide-assisted growth mechanism has also been proposed. 2,20

/pdf/direct-observation-of-vapor-liquid-solid-nanowire-growth-49migr30t8.pdf

Direct Observation of Vapor-Liquid-Solid Nanowire Growth

Fundamental aspects of VLS growth

The synthesis of semiconductor nanowires has been studied intensively worldwide for a wide spectrum of materials. Such low-dimensional nanostructures are not only interesting for fundamental research due to their unique structural and physical properties relative to their bulk counterparts, but also offer fascinating potential for future technological applications. Deeper understanding and sufficient control of the growth of nanowires are central to the current research interest. This Review discusses the various growth processes, with a focus on the vapor-liquid-solid process, which offers an opportunity for the control of spatial positioning of nanowires. Strategies for position-controlled and nanopatterned growth of nanowire arrays are reviewed and demonstrated by selected examples as well as discussed in terms of larger-scale realization and future prospects. Issues on building up nanowire-based electronic and photonic devices are addressed at the end of the Review, accompanied by a brief survey of recent progress demonstrated so far on the laboratory level.

/pdf/semiconductor-nanowires-from-self-organization-to-patterned-3y30i61axp.pdf

Semiconductor nanowires: from self-organization to patterned growth

This paper summarizes some of the essential aspects of silicon-nanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given, though the general focus of this work is on chemical vapor deposition of silicon nanowires. The advantages and disadvantages of the different catalyst materials for silicon-wire growth are discussed at length. Thereafter, in the second part, three thermodynamic aspects of silicon-wire growth via the vapor–liquid–solid mechanism are presented and discussed. These are the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs–Thomson effect for the silicon wire growth velocity. The third part is dedicated to the electrical properties of silicon nanowires. First, different silicon nanowire doping techniques are discussed. Attention is then focused on the diameter dependence of dopant ionization and the influence of interface trap states on the charge carrier density in silicon nanowires. It is concluded by a section on charge carrier mobility and mobility measurements.

/pdf/silicon-nanowires-a-review-on-aspects-of-their-growth-and-20jrcf5p99.pdf

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

The growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15–40 nm and about 2 μm long are reviewed and discussed. Experimental results for growing whiskers using Au as a growth catalyst during metalorganic vapor phase epitaxy (MOVPE) and the shape and growth direction of whiskers provide new insight into growth control of GaAs and InAs whiskers. The crystal structure of whiskers, Au behavior during MOVPE, and their growth mechanism are reviewed and discussed on the basis of transmission electron microscopic analysis. The photoluminescence spectra of GaAs wires are compared with those of a GaAs epitaxial layer, and the effect of surface treatment on the luminescence peak energy shift is discussed. The time dependent photoluminescence of GaAs wires is also discussed. The application of GaAs whiskers to light emitting devices is reviewed because a semiconductor wire structure employing quantum size effects is a very important element of electronic and optical devices.

H.J. Gassen

Papers

A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane