The influence of the illumination wavelength on the electrical parameters of a vertical parallel junction silicon solar cell by its rear side is theoretically analyzed. Based on the excess minority carrier’s density, the photocurrent density and photovoltage across the junction were determined. From both photocurrent and the photovoltage, the series and shunt resistance expressions are deduced and the solar cell associated capacitance and conversion efficiency are calculated. The aim of this study is to show the influence of the illumination wavelength on the electrical parameters of the cell and the behavior of both parasitic resistances and capacitance versus operating point.

Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain

In this paper, we present a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field. The influence of the applied magnetic field on the diode current density, Jd, and both electric power–photovoltage and photocurrent–photovoltage characteristics are discussed. The Nyquist diagram permitted us to determine the electrical parameters such as the series resistance Rs and parallel equivalent resistance Rp of a polycrystalline silicon solar cell. The Bode diagram is then used to calculate the cut-off frequency, capacitance C and inductance L. It has been shown that, under a magnetic field, the solar cell behavior is like that of a low-pass filter.

http://iopscience.iop.org/article/10.1088/0268-1242/26/9/095023/pdf

Three-dimensional study of a polycrystalline silicon solar cell: the influence of the applied magnetic field on the electrical parameters

This study presents a new technic based on the junction recombination velocity (Sf) for the evaluation of the series and shunt resistances. Associating Sf and Sb, the back surface recombination velocity, we resolved the continuity equation in the base of the solar cell under monochromatic illumination and plotted I-V and P-V curves. Using single I-V curve, two equivalent electric circuits of the solar are proposed and lead to expressions of R_s and R_(sh). Computations of Rs and Rsh and comparison with published data are given.

Modeling Study of N^+/P Solar Cell Resistances from Single I-V Characteristic Curve Considering the Junction Recombination Velocity (Sf)

In this study, we present a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field. The influence of the applied magnetic field on the diode current density Jd, the both electric power-photovoltage and photocurrent-photovoltage characteristics are discussed. Nyquist diagram permitted to determine the electrical parameters such as series resistance Rs and parallel equivalent resistance Rp of a polycrystalline silicon solar cell. Bode diagram is then used to calculate the cut-off frequency, the capacitance C and inductance L. It has been shown that, under magnetic field, the solar cell behavior is like a low-pass filter.

Magnetic Field Effect on the Electrical Parameters of a Polycrystalline Silicon Solar Cell

A theoretical study of a vertical parallel junction under constant multispectral light has been made. By using a new approach of the carrier generation rate we determine the recombination and electrical parameters. The photocurrent density J_PH is presented as a calibrated function, diffusion length dependent. It intercepts with the experimental short circuit current density J_(SC), at the minority carriers diffusion length L value. The photo voltage as a calibrated function of surface recombination velocity intercepts the experimental open circuit voltage at the junction intrinsic recombination velocity. The shunt and series resistances are presented respectively as a calibrated function of the surface recombination velocity and it intercepts with the value of junction recombination velocity in short circuit SF_(SC) or in open circuit SF_(OC) at the experimental shunt and series resistances value.

Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell

A 3D modelling is used to obtain the expression of excess minority carrier density in base region of a polycrystalline silicon solar cell. The concept of the junction recombination velocity S f is used to quantify how excess carrier flow through the junction in actual operating conditions. The plot of the photocurrent density allowed study the influence of the grain boundary recombination velocity and grain size on both, the junction recombination velocity and on the back surface recombination velocity of an n + - p - p + solar cell. This study pointed out the importance of the losses at the back side of solar cell. It's also show that the junction recombination velocity is more important for small grain size with large values of grain boundary recombination velocity.

H. L. Diallo

Papers

New approach of both junction and back surface recombination velocities in a 3D modelling study of a polycrystalline silicon solar cell