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H.L.N. Wiegman

Researcher at University of Wisconsin-Madison

Publications -  5
Citations -  609

H.L.N. Wiegman is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Electric-vehicle battery & Trickle charging. The author has an hindex of 5, co-authored 5 publications receiving 585 citations.

Papers
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Journal ArticleDOI

Design considerations for charge equalization of an electric vehicle battery system

TL;DR: In this article, the authors proposed a new charge equalization technique for a series string of battery cells, which utilizes a simple isolated DC-to-DC power converter with a capacitive output filter along with a multiwinding transformer.
Proceedings ArticleDOI

Design considerations for charge equalization of an electric vehicle battery system

TL;DR: In this article, the authors proposed a new charge equalization technique for a series string of battery cells, which utilizes a simple isolated DC-to-DC power converter with a capacitive output filter along with a multi-winding transformer.
Journal ArticleDOI

Charge equalization for an electric vehicle battery system

TL;DR: In this paper, the authors proposed a new charge equalization technique for a series string of battery cells, which utilizes a simple isolated dc-to-dc converter with a capacitive output filter along with a multiwinding transformer.
Proceedings ArticleDOI

A ZVS dual resonant converter for battery charging applications

TL;DR: In this article, a load side resonant, high power density, DC-to-DC converter is proposed, which is based on a half-bridge topology with zero voltage switching (ZVS) characteristics.
Proceedings ArticleDOI

High-temperature characteristics of IGBTs in soft- and hard-switching converters

Abstract: This paper reports on the experimental and theoretical performances of insulated gate bipolar transistor (IGBT) characteristics at elevated temperatures when used in soft- and hard-switching converters. It is shown that di/dt-dependent turn-on voltage spike and dynamic forward voltage saturation occur due to conductivity modulation lag in the drift region. During turn-off, temperature- and dv/dt-dependent elevated current waveforms were measured that are caused by the minority carrier storage and recombination in the drift region of the device. The measured data is shown to be in excellent agreement with the simulated results over the entire range of dv/dt, di/dt and temperature variations. The simulations were performed using an advanced mixed device and circuit simulator in which device carrier dynamics was studied under boundary conditions imposed by circuit operation. >