H. Saidi

TL;DR: In this article, a simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450, 500, and 500 °C) was used to fabricate transparent conducting n-type SnO2 semiconductor films.

TL;DR: In this article, the In2O3 thin films have been deposited by sol gel spin coating technique for different molar concentrations on glass substrates and X-ray diffraction spectra confirmed that the films have a polycrystalline nature with high preferred orientation along the (222) plane corresponding to In 2O3 cubic structure.

TL;DR: In this article, the influence of deposition time t = 2, 4, 6, 8 and 10 min on different properties of thin films, such as(XRD), photoluminescence(PL) and(UV) spectroscopy visible spectrum and four-point were investigated.

TL;DR: In this article, thin films of tin disulfide (SnS 2 ) have been deposited by ultrasonic spray on glass substrate at 300°C. The influence of flow rate (25 - 60ml/h) on the crystal structure, optical and electrical properties was determined by X-ray diffraction, UV spectroscopy visible and four points.

TL;DR: In this paper, the authors reported the use of sol-gel spin coating technique to deposit zinc oxide (Z n O ) thin films on glass substrate, and they changed the annealing temperature from 300°C to 600°C with steps of 100°C, they have three characterization techniques which are X-ray diffraction to determine the films structure, UV-vis spectroscopy for determination the optical proprieties of thin films and two-point probe method to establish the electrical conductivity.