SnS nanoflakes were synthesized using a solid state reaction method at 600 °C and their gas sensing properties were investigated. X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and Transmission Electron Microscopy (TEM) analysis revealed the formation of a pure, polycrystalline, orthorhombic phase of SnS nanoflakes. The response of the SnS nanoflakes sensor to reducing gases such as acetone and alcohols (ethanol, methanol and 1-butanol) was measured from 25 °C to 200 °C. The response of the SnS nanoflakes sensor was highest for acetone (∼1000% at 100 °C). It was determined that the optimal operating temperature of the SnS nanoflakes sensor was 100 °C for acetone and 1-butanol. Fast response and recovery times of these sensors were observed for all gases. With an increase in temperature from 25 °C to 200 °C, response and recovery times of the SnS nanoflakes sensor were improved for all gases. Finally, the SnS nanoflakes sensor characteristics have been compared to the characteristics of other metal oxide/sulphide nanostructure sensors reported in previous studies. Moreover, the SnS nanoflakes sensor showed good stability and reproducibility at 100 °C for acetone. As acetone in human breath is a marker for diagnosis of diabetes, this work demonstrates a possible use of SnS nanoflakes in diabetes diagnosis.

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Two-dimensional SnS nanoflakes: synthesis and application to acetone and alcohol sensors

Handbook of thin film technology

One-step solvothermal synthesis of carnation flower-like SnS2 as superior electrodes for supercapacitor applications

The nanostructured In2O3 thin films were deposited on Si n-type (1 0 0) substrates by reactive thermal evaporation. The structural, morphological, and oxidation states of the films were investigated using x-ray diffraction, scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The optical properties of the films were analyzed by UV–vis spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. The deposited films showed c-In2O3 crystalline nanostructures with a preferred diffraction peak of (2 2 2). The truncated icosahedron shape's morphology with a transmittance of 85% was observed in the In2O3 thin films. All the deposited indium oxide films have 3+ oxidation states.

https://iopscience.iop.org/article/10.1088/2053-1591/aa7f59/pdf

Structural, optical and XPS study of thermal evaporated In2O3 thin films

Fabrication of ordered honeycomb porous poly(vinyl chloride) thin film doped with a Schiff base and nickel(II) chloride

Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 °C). The structural studies reveal that the SnO2 films are polycrystalline at 350, 400, 450, 500 °C with preferential orientation along the (200) and (101) planes, and amorphous at 300 °C. The crystallite size of the films was found to be in the range of 20.9–72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10−2 Ωcm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.

https://iopscience.iop.org/article/10.1088/1674-4926/36/12/123002/pdf

Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

Tin sulfide(Sn x S y ) thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃. The influence of deposition time t =2, 4, 6, 8 and 10 min on different properties of thin films, such as(XRD), photoluminescence(PL) and(UV) spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS 2 , SnS, and Sn 2 S 3 phases, but the most prominent one is SnS 2 . The results of the(UV) spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity( ρ ) values of Sn x S y films have changed from 8.1×10 -4 to 1.62Ω·cm with deposition time.

https://iopscience.iop.org/article/10.1088/1674-4926/37/3/032001/pdf

Structural, optical and electrical properties of Sn x S y thin films grown by spray ultrasonic

Influence of solution flow rate on the properties of SnS2 films prepared by ultrasonic spray

Indium oxide (In 2 O 3 ) thin films are successfully deposited on glass substrate at different deposition times by an ultrasonic spray technique using Indium chloride as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrystalline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the (222) plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the (400) plane. The surface morphology of the In 2 O 3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The transmittance improvement of In 2 O 3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity (10 -2 Ω·cm), and relatively high transmittance (~ 93%).

http://iopscience.iop.org/article/10.1088/1674-4926/36/8/082002/pdf

Correlation between the structural, morphological, optical, and electrical properties of In 2 O 3 thin films obtained by an ultrasonic spray CVD process

Y. Benkhetta

Papers

Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

Structural, optical and electrical properties of Sn x S y thin films grown by spray ultrasonic

Influence of solution flow rate on the properties of SnS2 films prepared by ultrasonic spray

Correlation between the structural, morphological, optical, and electrical properties of In 2 O 3 thin films obtained by an ultrasonic spray CVD process

Influence of annealing temperature on In2O3 properties grown by an ultrasonic spray CVD process