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Hai Juan Meng

Researcher at Hebei Normal University

Publications -  5
Citations -  142

Hai Juan Meng is an academic researcher from Hebei Normal University. The author has contributed to research in topics: Thin film & Ferromagnetism. The author has an hindex of 3, co-authored 4 publications receiving 117 citations.

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Room-temperature ferromagnetism in Cu-doped TiO2 thin films

TL;DR: In this article, it was shown that both the oxygen vacancies and the distance between nearest-neighbor copper atoms play a crucial role for the appearance of magnetism in a semiconductor with nonmagnetic impurities.
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Oxygen vacancy enhanced the room temperature ferromagnetism in Ni-doped TiO2 thin films

TL;DR: In this article, Ni-doped TiO 2 anatase thin films were fabricated by reactive magnetron sputtering on SiO 2 substrates and the doping and annealing effects on structure and magnetism for the films have been systematically investigated.
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Impurity concentration study on ferromagnetism in Cu-doped TiO2 thin films

TL;DR: In this article, the authors observed significant room-temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, including Cu-doped rutile TiO2 thin films grown by reactive magnetron sputtering.
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Room Temperature Ferromagnetism in (n, Co)-CODOPED ZnO Thin Films

TL;DR: In this article, a series of nitrogen-doped Zn0.93Co0.07O thin films were obtained by magnetron sputtering, which have shown ferromagnetic property at room temperature.

Commensurate and incommensurate double moiré interference in twisted trilayer graphene

TL;DR: In this article , the authors adopt an atomistic method by combining tight-binding method with the semi-classical molecular dynamics to investigate the electronic structures of twisted trilayer graphene (TTG) with two independent twist angles.