A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.

Method and apparatus for high speed silicon optical modulation using pn diode

A ring optical modulator according to an embodiment, includes a ring resonator and an input/output optical waveguide. The ring resonator is configured to have a closed loop optical waveguide in a p-i-n diode structure. A portion of the closed loop optical waveguide and a portion of the input/output optical waveguide positioned close to each other function as an optical coupler. Relationships of Formula (2) to Formula (8) are satisfied by a loss x [%] per revolution of the resonator when the current is turned off and a power coupling ratio y [%] of the optical coupler for the light of the resonant wavelength λ r revolving around the ring resonator from output to input of the optical coupler.

Ring optical modulator

A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier

Systems and methods are provided for ultrafast optical waveform sampling based on temporal stretching of an input signal waveform. Temporal stretching is performed using a time lens based on four-wave mixing in a nonlinear medium. The signal is passed through an input dispersive element. The dispersed signal is sent into the time lens, which comprises a chirped pump pulse and a nonlinear medium. The chirped pump pulse is combined with the signal. The four-wave mixing process occurs in the nonlinear device or medium, which results in the generation of a signal at a new optical frequency (idler). The idler is spectrally separated from the signal and pump pulse using a bandpass filter and sent into an output dispersive element. The output dispersive element is longer than the input dispersive element and the temporal stretching factor is given by the ratio between the dispersions of these two elements.

High-speed optical sampling by temporal stretching using four-wave mixing

Described herein are an apparatus, system, and method, for providing a vertical optical coupler (VQC) for planar photonics circuits such as photonics circuits fabricated, on silicon-on-insulator (SOI) wafers. In one embodiment, the VOC comprises a waveguide made from a material having refractive index in a range of 1.45 to 3.45, the waveguide comprising; a first end configured to reflect light nearly vertical by total internal reflection between the waveguide and. another medium, a second end to receive the light for reflection, and a third end to output the reflected, light. The VOC couples with a Si waveguide having a first region including: a first end to receive light; and an inverted, tapered end in the direction of light propagation to output the received, light, wherein the inverted tapered end of the Si waveguide is positioned inside the waveguide.

Vertical optical coupler for planar photonic circuits

A semiconductor-based Raman ring amplifier is disclosed. A method according to aspects of the present invention includes directing a pump optical beam having a pump wavelength and an input pump power level from an optical waveguide into a ring resonator. The optical waveguide and ring resonator are comprised in semiconductor material. A signal optical beam having a signal encoded thereon at a signal wavelength is directed from the optical waveguide into the ring resonator. The pump optical beam is resonated within the ring resonator to increase a power level of the pump optical beam to a power level sufficient to amplify the signal optical beam via stimulated Raman scattering (SRS) within the ring resonator. A free carrier concentration in the optical waveguide and the ring resonator is reduced to reduce attenuation of the pump optical beam and the signal beam.

Semiconductor Raman ring amplifier

A fast optical modulator or switch with reduced optical loss is disclosed An apparatus according to aspects of the present invention includes an optical splitter disposed in a semiconductor material An optical beam having a first wavelength is split by the optical splitter into first and second portions First and second optical waveguides disposed in the semiconductor material are optically coupled to the optical splitter The first and second portions of the optical beam are to be directed through the first and second optical waveguides, respectively The first optical waveguide is also optically coupled to receive a pump optical beam The pump optical beam has a pump wavelength and a pump power level to amplify and phase shift the first portion of the optical beam of the first wavelength in the first optical waveguide A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam

Reduced loss ultra-fast semiconductor modulator and switch

In the absence of using any chromatic dispersion compensation technique, it may be difficult to detect the transmitted data over long distances at the receiving end. Embodiments utilize the optical phase conjugation (OPC) property in silicon waveguides to compensate chromatic dispersion effect in optical fibers.

Silicon waveguide dispersion compensator using optical phase conjugation

Silicon photonics has made rapid progress in recent years achieving several key breakthroughs. In particular, chip-scale silicon lasers and amplifiers based on stimulated Raman scattering have been successfully demonstrated in continuous wave operation

Haisheng Rong

Papers

Semiconductor Raman ring amplifier

Reduced loss ultra-fast semiconductor modulator and switch

Silicon waveguide dispersion compensator using optical phase conjugation

A Ring Cavity Raman Silicon Laser

Ultraschneller halbleitermodulator und schalter mit verringerten verlusten