An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

An image display apparatus, which requires individual transmission of signals to portions corresponding to a plurality of pixels or lines, such as a liquid crystal display, a plasma display and includes signal transmitting sections 4, 5 for transmitting signals to an image display section to which independent signals are applied for each pixel or line, a plurality of transmitting lines arranged parallel to each other at regular intervals are brought for each plurality of transmitting blocks. A transmitting line, serving as a dummy between transmitting lines which are located in different transmitting blocks and adjacent to each other, is disposed in any one of transmitting blocks including the adjacent transmitting lines. A transmitting line nearest to the dummy transmitting line in the other transmitting block of the transmitting blocks including the adjacent transmitting lines is electrically connected to the dummy transmitting line outside of the signal transmitting sections 4, 5.

Image display apparatus

An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode, preferably made of an aluminum film formed over a glass substrate, and a gate insulator preferably made of an upper silicon nitride film and a lower anodized oxide film of the aluminum film. Dummy gate lines DGL are disposed outside the outermost scanning signal line GL, and dummy data lines DDL are disposed outside the outermost video signal line DL so as to prevent breakage of outermost signal lines.

Liquid crystal display device having peripheral dummy lines

Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (θ) formed between the selective oxidation mask and the aluminum pattern is made as: θ≧110-20T (T: film thickness of the positive type photoresist).

Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment

In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.

Method of manufacturing active matrix panel

An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode of an upper aluminum film and a lower tantalum film formed over a glass substrate and a gate insulator of an upper silicon nitride film and a lower anodized oxide film of the aluminum film.

Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al oxide film

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (θ) formed between the selective oxidation mask and the aluminum pattern is made as: β≧110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

Haruo Matsumaru

Papers

Liquid crystal display device having peripheral dummy lines

Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment

Method of manufacturing active matrix panel

Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al oxide film

Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment