H
Hayashi Hisao
Researcher at Sony Broadcast & Professional Research Laboratories
Publications - 13
Citations - 160
Hayashi Hisao is an academic researcher from Sony Broadcast & Professional Research Laboratories. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 6, co-authored 13 publications receiving 160 citations.
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Patent
Method of making a thin film transistor
Hayashi Hisao,Matsushita Takeshi +1 more
TL;DR: In this article, a method of fabricating a large-scale integrated circuit with a semiconductor layer supported on a substrate via at least insulating layers is described. But this method is not suitable for the case of a large number of wires.
Patent
Semiconductor device having a hetero junction
TL;DR: A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith is described in this article.
Patent
Semiconductor device with a high breakdown voltage characteristic
TL;DR: In this article, a semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction, where a field limiting ring is disposed spaced from the PN.
Patent
Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature
TL;DR: In this paper, a method of an iron Fe ion implantation into a semiconductor substrate of an N-type conductivity is disclosed, which comprises the steps of implanting Fe ions into an n-type semiconductive substrate from its one surface with the dose amount of 10 10 to 10 15 cm -2 and heat-treating the substrate with Fe ions at 850° to 1250° C. to control the lifetime of the minority carrier in the substrate.