A method and system for preparing polysilicon slim rods, the method and system including: placing a piece of polysilicon on a fixture; applying a predetermined laser beam or abrasive jet to the piece of polysilicon; and separating a polysilicon slim rod from the piece of polysilicon. The laser beam may be used for either cutting or for cracking depending on the operating parameters chosen. There may also be various combinations of cutting and cracking used in order to separate the slim rod from the piece of polysilicon. For example, the laser cut may be a scribing and/or partial cut and the separation may be completed by cracking the remaining silicon. In this case, the cracking may be accomplished by, for example, mechanical bending or laser cracking. Generally speaking, a laser beam used for cracking may be different from and have differing operating parameters from a laser beam used for cutting.

Systems and methods for producing silicon slim rods

The invention relates to a polycrystalline silicon rod that is characterised in that it has a rod cross-section having a surface ratio of between 50 - 99 % of silicon for electric conduction and the rod has a bending strength of between 0.1 to 80 N/mm2.

Polycrystalline silicon and method for the production thereof

A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.

Increased polysilicon deposition in a CVD reactor

The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. A contact region coating is disposed on the contact region of the exterior surface of the electrode. The contact region coating has an electrical conductivity of at least 9x106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.

Manufacturing apparatus for depositing a material and an electrode for use therein

The invention relates to a reactor (10) for producing polycrystalline silicon, having a reactor floor (2) having a plurality of nozzles (4) formed therein. A siliceous gas flows in through the nozzles (4). A plurality of filament rods (6) are also mounted on the reactor floor (2). A gas outlet opening (8) for feeding used siliceous gas to an enrichment and/or conditioning is further provided. The gas outlet opening (8) is formed at a free end (21) of an inner tube (20), wherein the inner tube (20) is fed through the reactor floor (2).

Reactor for producing polycrystalline silicon using the monosilane process

The invention relates to a polysilicon rod for FZ applications obtainable by deposition of high-purity silicon from a silicon-containing reaction gas, which has been thermally decomposed or reduced by hydrogen, on a filament rod. The polysilicon rod contains, surrounding the filament rod, an inner zone having but few needle crystals, small in size, an outer zone having a relatively small amount of larger needle crystals, and a smooth transition zone between the inner and outer zones. The polysilicon rods are obtained in high yield and can be refined in one pass in an FZ process.

Polycrystalline silicon rod for zone reflecting and a process for the production thereof

A method of producing a polycrystalline silicon rod is by depositing silicon on a carrier rod and cutting to size a molding produced in the process. In order that the silicon rod is given a rod end which is free of cracks and flaking, the rod is rotated about its longitudinal axis and cut through with a parting tool.

Method of producing a polycrystalline silicon rod

The invention relates to a method for producing polycrystalline silicon rods by deposition of silicon on at least one thin rod in a reactor, wherein, before the silicon deposition, hydrogen halide at a temperature of 400 - 1000°C is introduced into the reactor containing at least one thin rod and is irradiated by means of UV light, as a result of which halogen and hydrogen radicals arise and the volatile halides that form are removed from the reactor.

Method for producing polycrystalline silicon rods

A device for protecting electrode holders in CVD reactors includes an electrode suitable for accommodating a filament rod on an electrode holder which includes an electrically conductive material and is installed in a recess of a bottom plate, wherein an intermediate space between an electrode holder and a bottom plate is sealed by means of a sealing material, and the sealing material is protected by a protective body which is made up of one or more parts and is arranged in a ring-like manner around the electrodes, and the height of the protective body increases at least in sections in the direction of the electrode holder.

Protective device for electrode holders in cvd reactors

Mounting for carrier bodies in an apparatus for the deposition of semiconductor material on heated carrier bodies, having a fixed current leadthrough passed through the base plate of the deposition apparatus, an electrode holder, and a graphite electrode There is also at least one spring element which is disposed between the current leadthrough and the electrode holder, which permits a movement of the electrode holder relative to the current leadthrough and which cushions this movement

Heinz Kraus

Papers

Polycrystalline silicon rod for zone reflecting and a process for the production thereof

Method of producing a polycrystalline silicon rod

Method for producing polycrystalline silicon rods

Protective device for electrode holders in cvd reactors

Mounting for carrier bodies in an apparatus for the deposition of semiconductor material