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Hele Savin

Researcher at Aalto University

Publications -  205
Citations -  3329

Hele Savin is an academic researcher from Aalto University. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 25, co-authored 184 publications receiving 2632 citations. Previous affiliations of Hele Savin include Helsinki University of Technology.

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Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

TL;DR: It is demonstrated that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very sensitive to front surface passivation, meaning that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production.
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Review of light-induced degradation in crystalline silicon solar cells

TL;DR: In this article, a review compiles four decades of light-induced degradation results in both electronic and solar-grade crystalline silicon, focusing on the properties and defect models of boron-oxygen LID and copper-related LID.
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Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

TL;DR: The combination of black silicon to improve the light absorption and negatively charged alumina to form an induced collecting junction characterizes a photodiode with external quantum efficiency above 96% between 250 µm and 950 µm.
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Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

TL;DR: In this paper, the authors demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures.
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20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%

TL;DR: In this article, a cost-efficient roadmap for industrial crystalline silicon solar cell production lines is presented, where the key processes of ozone-based ALD Al2O3 rear surface passivation and screen printed aluminum local back surface field are discussed in detail.