The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.

Plasma surface treatment to prevent pattern collapse in immersion lithography

A pumpable slurry of shredded scrap solid carbonaceous plastic-containing material that contains associated inorganic matter in admixture with a comminuted aluminosilicate-containing material having noncombustible constituents is reacted by partial oxidation to produce synthesis gas, reducing gas, or fuel gas The noncombustible constituents in the aluminosilicate-containing material captures the inorganic matter in the scrap solid carbonaceous plastic-containing material while in the reducing atmosphere of the gasifier to produce nontoxic, nonleachable slag The slurrying medium is water, liquid hydrocarbonaceous fuel, or mixtures thereof Scrap plastics may be disposed of by the subject process without polluting the nation's environment

Environmentally acceptable process for disposing of scrap plastic materials

A method for producing a recessed oxide allows the fabrication of large bonding pads with small capacitance. These bonding pads on simultaneously thick oxide on the semiconductor surface enable contact exposure with good image formation of fine structures on the surface of a transistor. With a protective layer (2), a region (S1) of a semiconductor surface (1) is covered. The area of the semiconductor surface (1) uncovered with the protective layer (2) is etched. Subsequently, an oxide (3) of desired thickness (b) is deposited. With a second phototechnological step the deposited oxide (3) is etched with a structure (S2). Thermal oxidation follows with growth of a hermetic oxide layer (4) the thickness (c) of which is small relative to the thickness (b) of the deposited oxide layer (3). The thermic oxide layer (4) is structured to form the desired geometry.

Method for generating a sunken oxide

A method for producing a buried oxide to enable the production of large connection pads with a small capacity of these connection pads at the same time a thick oxide on the semiconductor surface with good imaging of fine structures on the surface of a transistor, in particular also in contact exposure. With a protective layer (2) is covered an area (S1) of a semiconductor surface (1). The non with the protective layer (2) covered area of ​​the semiconductor surface (1) is etched. Then, an oxide (3) to the desired thickness (b) is deposited. With a second photographic technique step, the deposited oxide (3) with a structure (S2) is etched. It is followed by a thermal oxidation to grow a thermal oxide layer (4) whose thickness (c) is small compared to the thickness (b) of the deposited oxide layer (3). The thermal oxide layer (4) is structured with the desired geometry.

Herbert. Dr. Weidlich

Papers

Method for generating a sunken oxide

Process for producing an embedded oxide