H
Herbert Vinck-Posada
Researcher at National University of Colombia
Publications - 132
Citations - 791
Herbert Vinck-Posada is an academic researcher from National University of Colombia. The author has contributed to research in topics: Photonic crystal & Hydrostatic pressure. The author has an hindex of 12, co-authored 125 publications receiving 586 citations. Previous affiliations of Herbert Vinck-Posada include University of Antioquia.
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Tuning of transmittance spectrum in a one-dimensional superconductor-semiconductor photonic crystal
TL;DR: In this article, the transmittance spectrum of a one-dimensional photonic crystal made up of alternated layers of a semiconductor (GaAs) and a high-Tc superconductor (HgBa2Ca2Cu3O8+δ) under the effects of temperature, hydrostatic pressure and angle of incidence was studied.
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Dependence of the defect mode with temperature, pressure and angle of incidence in a 1D semiconductor-superconductor photonic crystal
TL;DR: In this paper, the effects of temperature, hydrostatic pressure, and angle of incidence on the defect mode in a one-dimensional photonic crystal composed of alternating layers of a semiconductor and a superconductor with a high critical temperature were studied.
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The effect of the hydrostatic pressure and temperature on the defect mode in the band structure of one-dimensional photonic crystal
TL;DR: In this article, the effects of hydrostatic pressure and temperature on the defect mode in the band structure of a one-dimensional photonic crystal were studied using the plane wave expansion method.
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Effects of hydrostatic pressure on the band structure in two-dimensional semiconductor square photonic lattice with defect
TL;DR: In this paper, the effects of hydrostatic pressure on the structure of TM bands in two-dimensional square-lattice photonic crystals were studied using the plane wave expansion method.
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Dependence of photonic defect modes on hydrostatic pressure in a 2D hexagonal lattice
TL;DR: In this paper, the photonic band structure for both transverse electric (TE) and transverse magnetic (TM) polarizations, exhibit a shift to highfrequency regions due to a decrease in the dielectric constant of the semiconductor.