H
Herzl Aharoni
Researcher at Ben-Gurion University of the Negev
Publications - 103
Citations - 1371
Herzl Aharoni is an academic researcher from Ben-Gurion University of the Negev. The author has contributed to research in topics: Light emission & Light-emitting diode. The author has an hindex of 21, co-authored 102 publications receiving 1331 citations. Previous affiliations of Herzl Aharoni include Tohoku University & University of Pretoria.
Papers
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Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
TL;DR: It is demonstrated that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method and the built-in potential and net carrier concentration of the structure.
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An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface
TL;DR: In this paper, a silicon light emitting device was designed and realized utilizing a standard 2/spl mu/m industrial CMOS technology design and processing procedure, which can interface with a multimode optical fiber.
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Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems
TL;DR: In this paper, a variety of two terminal and multiterminal integrated silicon light-emitting devices (Si-LEDs) can be routinely fabricated without any adaptation to the process, enabling the production of all-silicon monolithic optoelectronic systems.
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Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity
TL;DR: In this article, the authors reported an increase in emission intensity of up to 10 nW/mm 2 that has been realized with a new novel two junction, diagonal avalanche control, and minority carrier injection silicon complementary metaloxide-semiconductor (CMOS) light emitting device (LED).
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X‐ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition
A. J. Nelson,Herzl Aharoni +1 more
TL;DR: X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O2 partial pressure during deposition in this article, showing that the films become increasingly stoichiometric as PO2 is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In-O bonding.