Journal ArticleDOI
Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems
TLDR
In this paper, a variety of two terminal and multiterminal integrated silicon light-emitting devices (Si-LEDs) can be routinely fabricated without any adaptation to the process, enabling the production of all-silicon monolithic optoelectronic systems.Abstract:
It is shown that, by using conventional VLSI design rules and device processing, a variety of two terminal and multiterminal integrated silicon light-emitting devices (Si-LEDs) can be routinely fabricated without any adaptation to the process, enabling the production of all-silicon monolithic optoelectronic systems. Their specific performance can be tailored by their different geometries and structures, yielding, by design, area, line, and point light-emitting patterns. The light-generating mechanisms are based on carrier quantum transitions in Si pn junctions, operated in the field emission or avalanche modes. Field emission Si-LEDs can operate at supply voltages compatible with those of integrated circuits (5 V or less). Avalanche Si-LEDs require higher operating voltages, but yield higher light intensities. The two terminal Si-LEDs yield a linear relation between the emitted light intensity and the driving current. The multiterminal Si-LEDs exhibit a nonlinear relation between the light emission intensity and the controlling electrical signal, enabling signal processing operations, which can not be attained in two terminal Si-LEDs. Two basic structures of multi terminal Si-LEDs are presented, i.e MOS-like structures, or carrier injection based structures (BJT-like devices). They possess different input impedances and both their emitted light intensities and emitting area patterns can be controlled by the input electrical signal.read more
Citations
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Journal ArticleDOI
Monolithically integrated Si gate-controlled light-emitting device: science and properties
TL;DR: In this paper, a three-terminal Si light emitting device is described where both the light intensity and spatial light pattern of the device are controlled by the gate voltage, depending on the bias conditions.
Journal ArticleDOI
Integrated Silicon Directly Modulated Light Source Using p-Well in Standard CMOS Technology
TL;DR: A new MOS-like structure utilizing deep p-well is presented, and compared with conventional planar p-n junction diode at visible wavelength and avalanching bias conditions, with experimental results for a reverse-bias region showing light modulation.
Journal ArticleDOI
High-speed light Modulation in avalanche breakdown mode for Si diodes
TL;DR: In this paper, the limiting speed of light emission from a p-n junction in the forward bias region is determined by the transit time of the minority carriers across the junction during the filament formation of breakdown currents, which is demonstrated by simulation of the propagation of a shockwave-like pattern in the breakdown field.
Journal ArticleDOI
Silicon-based light emitters
TL;DR: In this paper, a Si light emitting diode (LED) capable of emitting efficiently at 1.55 μm and 1.3 pm, respectively, is proposed, which utilizes radiation from a well-defined dislocation network created in a reproducible manner by direct Si wafer bonding.
Journal ArticleDOI
Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions
TL;DR: In this paper, the photon emission rate is modeled as a function of the electron temperature, which is computed from the spatial distribution of the electric field, and it is theoretically derived that a specific minimum geometrical width (170 nm) of the active region of avalanche is required, corresponding to a breakdown voltage of 5V, below which the rate of photon emission in the desired spectrum drops.
References
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Journal ArticleDOI
Photon Emission from Avalanche Breakdown in Silicon
A. G. Chynoweth,K. G. McKay +1 more
TL;DR: In this article, it was shown that the number of light spots increases with the current rather than individual spots growing brighter, and that all the breakdown current is carried through the junction by these localized light-emitting spots.
Journal ArticleDOI
On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices
TL;DR: In this article, a photon emission efficiency of 2.9*10/sup 5/ photons with energy higher than 1.14 eV per carrier crossing the junction, independent of the lattice temperature down to 20 K, was measured.
Journal ArticleDOI
Visible Light from a Silicon p − n Junction
TL;DR: In this article, the effects of surface treatment on the phenomenon are discussed and two typical light output vs reverse current curves are shown, which suggest that the light results from a radiative relaxation mechanism involving the high-energy carriers produced in the avalanche breakdown process.
Journal ArticleDOI
Hot-carrier luminescence in Si
TL;DR: In this article, the authors investigated the physical mechanisms responsible for light emission in Si under varying doping and carrier conditions and as a function of hot-carrier distribution functions, and concluded that the dominant light-emission mechanism in normally biased Si MOSFET's is a combination of direct and phonon-assisted inter-conduction-band radiation.
Book
Light emission in silicon : from physics to devices
TL;DR: In this article, the authors present a theory of the Radiative and Non-Radiative Processes in Silicon Nanocrystallites, which they call Porous Silicon: Photoluminescence and Electroluminescent Devices.