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Hey-Jung Park

Researcher at Kyungpook National University

Publications -  11
Citations -  354

Hey-Jung Park is an academic researcher from Kyungpook National University. The author has contributed to research in topics: Field-effect transistor & DNA field-effect transistor. The author has an hindex of 5, co-authored 11 publications receiving 341 citations.

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An FET-type charge sensor for highly sensitive detection of DNA sequence.

TL;DR: It is confirmed that DNA sequence can be detected by measuring the variation of the drain current due to the variationof DNA charge and the proposed FET-type DNA charge sensor might be useful in the development for DNA chips.
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Detection of DNA and Protein Molecules Using an FET‐Type Biosensor with Gold as a Gate Metal

TL;DR: In this article, a field effect transistor (FET)-type biosensor based on 0.5μm standard complementary metal oxide semiconductor (CMOS) technology is proposed and its feasibility for detecting deoxyribonucleic acid (DNA) and protein molecules is investigated.
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Field effect transistor-based bimolecular sensor employing a Pt reference electrode for the detection of deoxyribonucleic acid sequence

TL;DR: A field effect transistor (FET)-type biomolecular sensor for the detection of the deoxyribonucleic acid (DNA) sequence based on 0.5 µm standard complementary metal oxide semiconductor (CMOS) technology showed good agreement with ex situ measurement and detected the DNA sequence by both in situ and ex situ measurements.
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Fabrication and Characteristics of a Field Effect Transistor-Type Charge Sensor for Detecting Deoxyribonucleic Acid Sequence

TL;DR: In this paper, an FET-type deoxyribonucleic acid (DNA) charge sensor was proposed to detect the DNA sequence by sensing the variation of drain current due to DNA hybridization and investigated its electrical characteristics.
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Characteristics and modeling of a nonplanar nonrectangular metal oxide semiconductor field effect transistor for charge sensing in the Si micro-fluidic channel

TL;DR: In this paper, a nonplanar, nonrectangular metal-oxide-semiconductor field effect transistor (MOSFET) with an asymmetrical channel structure for sensing charge in the Si micro-fluidic channel was fabricated, and the electrical characteristics of the fabricated three-dimensional (3-D) MOSFet were measured.