H
Hidekazu Miyairi
Publications - 122
Citations - 1373
Hidekazu Miyairi is an academic researcher. The author has contributed to research in topics: Semiconductor & Thin-film transistor. The author has an hindex of 17, co-authored 122 publications receiving 1368 citations.
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Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Manufacturing method of SOI substrate and manufacturing method of semiconductor device
TL;DR: In this article, a manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated, which includes implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer.
Patent
Semiconductor device and semiconductor device production system
Atsuo Isobe,Shunpei Yamazaki,Koji Dairiki,Hiroshi Shibata,Chiho Kokubo,Tatsuya Arao,Masahiko Hayakawa,Hidekazu Miyairi,Akihisa Shimomura,Koichiro Tanaka,Mai Akiba +10 more
TL;DR: In this article, a semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current.
Patent
Thin film transistor with two gate electrodes
TL;DR: In this article, a pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide.
Patent
Thin film transistor and display device
Koji Dairiki,Takayuki Ikeda,Hidekazu Miyairi,Yoshiyuki Kurokawa,Hiromichi Godo,Daisuke Kawae,Takayuki Inoue,Satoshi Kobayashi +7 more
TL;DR: In this paper, a thin-film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween.