An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Poly[1-(trimethylsilyl)-1-propyne] and related polymers: Synthesis, properties and functions

Porous ceramics are now expected to be used for a wide variety of industrial applications from filtration, absorption, catalysts and catalyst supports to lightweight structural components. During the last decade, tremendous efforts have been devoted for the researches on innovative processing technologies of porous ceramics, resulting in better control of the porous structures and substantial improvements of the properties. This article intends to review these recent progresses of porous ceramics. Because of a vast amount of research works reported in this field these days, the review mainly focuses on macro-porous ceramics whose pore size is larger than 50 nm. Followed by giving a general classification of porous ceramics, a number of innovative processing routes developed for critical control of pores are described, along with some important properties. The processes are divided into four categories including (i) partial sintering, (ii) sacrificial fugitives, (iii) replica templates and (iv) dir...

Macro-porous ceramics: processing and properties

Thermoelectric energy conversion can be used to capture electric power from waste heat in a variety of applications. The materials that have been shown to have the best thermoelectric properties are compounds containing elements such as tellurium and antimony. These compounds can be oxidized if exposed to the high temperature air that may be present in heat recovery applications. Oxide materials have better stability in oxidizing environments, so their use enables the fabrication of more durable devices. Thus, although the thermoelectric properties of oxides are inferior to those of the compounds mentioned above, their superior stability may expand potential the high temperature application of thermoelectric energy conversion. In this paper, the thermoelectric properties of promising oxide materials are reviewed. The different types of oxides used for thermoelectric applications are compared and approaches for improving performance through doping are discussed.

Oxide materials for high temperature thermoelectric energy conversion

This ceramic sheath type thermocouple has a long
service life, an improved temperature measuring
responsibility and an improved temperature measuring
precision, and enables repetitive use. The ceramic
sheath type thermocouple has its protective tube(1)
formed of a heat resisting ceramics selected from
silicon nitride, sialon and silicon carbide. In the
protective tube(1) are installed a pair of W-Re wires
(6,7) that are connected to form a joint portion
constituting a temperature measuring point(5). 
A filler(2) made of S1 i N 4 reaction-sintered ceramics is
loaded into the front end portion(4) of the protective
tube(1) to enclose the W-Re wires(6,7). Another filler
(3) made of SiC whisker with a heat conductivity
smaller than that of the filler(3) of the front end
portion(4) is loaded into the rear portion(16) of the
protective tube(1). An inert gas is sealed in the
protective tube(1). Alternatively, the temperature
measuring portion(22) may be formed by exposing from
the front end portion(4) of the protective tube(21) the
joint portion(29) where the ends of the W-Re wires(26,
27) are connected. The temperature measuring portion
(22) is coated with a cover film(28,37) that is made of
silicon carbide, silicon nitride or a composite of
these, all having excellent heat resisting and
corrosion resisting properties.

A ceramic sheath type thermocouple

The maximum substitution of monovalent, divalent, and trivalent metal ions for β-tricalcium phosphate (β-TCP) was investigated, and a substitution model of these metal ions for β-TCP was proposed. Monovalent metal ions (MI) could replace Ca(4) site and vacancy (VCa(4)) in β-TCP as 2MI=Ca2++VCa(4) and the maximum substitution was about 9.1 mol%. In the case of divalent metal ions (MII), Ca(4) and Ca(5) sites were replaced by divalent metal ions as MII=Ca2+, and the maximum substitution was about 13.6 mol%. Trivalent metal ions (MIII) could be substituted for Ca(4) site and vacancy as 3MIII=2Ca2++VCa(4), and the maximum substitution was about 9.1 mol%.

Substitution Model of Monovalent (Li, Na, and K), Divalent (Mg), and Trivalent (Al) Metal Ions for β‐Tricalcium Phosphate

Progress in tribological research of SiC ceramics in unlubricated sliding-A review

Boron carbide (B4C) ceramics has many outstanding performance, such as extremely high hardness, low density, high melting point, high elastic modulus, high thermoelectromotive force, high chemical ...

Progress in pressureless sintering of boron carbide ceramics – a review

β-tricalcium phosphate (β-TCP) powder doped with monovalent or divalent metal ions was hot pressed at 1100°C, and the effect of substitutional monovalent and divalent metal ions on mechanical properties of β-TCP was investigated The sinterability of β-TCP would be enhanced by the substitution of monovalent and divalent metal ions for β-TCP Sintered β-TCP doped with 76 mol% of Mg2+ ion showed a bending strength of 160 MPa It was found that the substituition of Mg2+ ion up to 96 mol% and a small amount of monovalent metal ions for β-TCP is effective to improve the mechanical strength of β-TCP

Hideki Kita

Papers

A ceramic sheath type thermocouple

Substitution Model of Monovalent (Li, Na, and K), Divalent (Mg), and Trivalent (Al) Metal Ions for β‐Tricalcium Phosphate

Progress in tribological research of SiC ceramics in unlubricated sliding-A review

Progress in pressureless sintering of boron carbide ceramics – a review

Effect of Substitutional Monovalent and Divalent Metal Ions on Mechanical Properties of β‐Tricalcium Phosphate