H
Hideki Matsumura
Researcher at Japan Advanced Institute of Science and Technology
Publications - 297
Citations - 4995
Hideki Matsumura is an academic researcher from Japan Advanced Institute of Science and Technology. The author has contributed to research in topics: Amorphous silicon & Silicon. The author has an hindex of 33, co-authored 296 publications receiving 4888 citations. Previous affiliations of Hideki Matsumura include NEC.
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Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method
TL;DR: In this paper, the Cat-CVD a-Si, p-Si and SiNx films are compared with those obtained by the conventional plasma CVD (PCVD) method.
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Theoretical Considerations on Lateral Spread of Implanted Ions
TL;DR: In this paper, a theoretical analysis on the lateral spread of the distribution for implanted ions in amorphous targets is presented, where the solutions of the second order differential equations concerning moments of the ranges are necessary and sufficient to estimate the lateral distribution, if the Gaussian distribution is assumed.
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Catalytic Chemical Vapor Deposition (CTC–CVD) Method Producing High Quality Hydrogenated Amorphous Silicon
TL;DR: In this article, a new method of producing high quality hydrogenated amorphous silicon (a-Si:H) films was presented, without using any plasmas or photochemical excitation, but using only thermal and catalytic reactions between deposition-gas and heated tungsten catalyzer.
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Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH4/H2 system
Hironobu Umemoto,Kentaro Ohara,Daisuke Morita,Yoshitaka Nozaki,Atsushi Masuda,Hideki Matsumura +5 more
TL;DR: In this paper, the absolute densities of H atoms produced in catalytic chemical vapor deposition (Cat-CVD or hot-wire CVD) processes were determined by employing two-photon laser-induced fluorescence and vacuum ultraviolet absorption techniques.
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Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous silicon
TL;DR: In this paper, a new type of thermal chemical vapor deposition (CVD) method is presented, where material gases are decomposed by catalytic or pyrolytic reaction with a heated catalyzer, so that films can be deposited at temperatures less than 300°C without any plasma or photochemical excitation.