The theory of image formation is formulated in terms of the coherence function in the object plane, the diffraction distribution function of the image-forming system and a function describing the structure of the object. There results a four-fold integral involving these functions, and the complex conjugate functions of the latter two. This integral is evaluated in terms of the Fourier transforms of the coherence function, the diffraction distribution function and its complex conjugate. In fact, these transforms are respectively the distribution of intensity in an 'effective source', and the complex transmission of the optical system-they are the data initially known and are generally of simple form. A generalized 'transmission factor' is found which reduces to the known results in the simple cases of perfect coherence and complete incoherence. The procedure may be varied in a manner more suited to non-periodic objects. The theory is applied to study inter alia the influence of the method of illumination on the images of simple periodic structures and of an isolated line.

On the diffraction theory of optical images

A semiconductor device can be fabricated using a photomask that has been modified using an assist feature design method (see e.g., FIG. 4 A) based on normalized feature spacing. Before the device can be fabricated, a layout of original shapes is designed ( 402 ). For at least some of the original shapes, the width of the shape and a distance to at least one neighboring shape are measured ( 404 ). A modified shape can then be generated by moving edges of the original shape based on the width and distance measurements ( 406 ). This modification can be performed on some or all of the original shapes ( 408 ). For each of the modified shapes, a normalized space and correct number of assist features can be computed ( 410 ). The layout is then modified by adding the correct number of assist features in a space between the modified shape and the neighboring shape ( 412 ). This modified layout can then be used in producing a photomask, which can in turn be used to produce a semiconductor device.

Semiconductor device fabrication using a photomask with assist features

In a massed region of each of a plurality of transfer areas of a mask a plurality of light transmission patterns are formed by opening a half-tone film A phase shifter is disposed in each of the light transmission patterns so that a 180° phase inversion occurs between the lights that transmit through adjacent light transmission patterns In a sparse region of the plurality of transfer areas a solitary light transmission pattern is formed by opening the half-tone film Both shape and size are the same among the light transmission patterns, which are disposed symmetrically in both the massed and sparse regions about the center between the transfer areas The phase shifters in the massed regions are disposed so that the phase of each phase shifter in one of the transfer areas comes to be opposed to that of its counterpart in the other transfer area In the exposure process, those transfer areas are overlaid one upon another in the same chip region

Manufacturing method of semiconductor integrated circuit device

A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.

Correction method and correction apparatus of mask pattern

An integrated circuit for data encryption/decryption and secure key management is disclosed. The integrated circuit may be used in conjunction with other integrated circuits, processors, and software to construct a wide variety of secure data processing, storage, and communication systems. A preferred embodiment of the integrated circuit includes a symmetric block cipher that may be scaled to strike a favorable balance among processing throughput and power consumption. The modular architecture also supports multiple encryption modes and key management functions such as one-way cryptographic hash and random number generator functions that leverage the scalable symmetric block cipher. The integrated circuit may also include a key management processor that can be programmed to support a wide variety of asymmetric key cryptography functions for secure key exchange with remote key storage devices and enterprise key management servers. Internal data and key buffers enable the device to re-key encrypted data without exposing data. The key management functions allow the device to function as a cryptographic domain bridge in a federated security architecture.

Method and apparatus for hardware-accelerated encryption/decryption

An encryption apparatus for generating a ciphertext block from a plaintext block is disclosed. A selector selects at random one mask random number from a plurality of random numbers generated by a random number generator. A mask processing unit executes mask processing of a plaintext block by using the mask random number selected by the selector. A storage unit stores a first table representing an initial S-box. A converter converts the first table into a second table representing a deformed S-box on the basis of the mask random number selected by the selector. An encryption unit generates a ciphertext block by shuffling the mask-processed plaintext block using the second table.

Encryption apparatus and encryption method

An exposure mask and an exposure method are provided, which can suppress adverse effects of interference edge patterns (sub-shifters) located around a central pattern. The exposure mask has central patterns and edge patterns arranged around each central pattern. The mutual interference of edge patterns is reduced by providing an angle or a phase difference between vicinity edge patterns, or providing a single edge pattern to reduce the light transmission.

Phase shift mask and method of manufacturing the same

Practical resolution, which is defined as the minimum geometry for a 1.0 micrometers depth of focus, in conventional krypton fluoride (KrF) excimer laser (248 nm) lithography is 0.30 micrometers . A new illumination technique, which uses a weak quadruple effect to enhance the depth of focus and to solve the current problems in the off-axis illumination techniques, has been developed. This new illumination technique is suitable for use with the attenuated phase shifting mask. With this combination technique, a 1.8 micrometers depth of focus using a 0.45 NA KrF excimer laser stepper can be achieved without a secondary peak in the distribution of light intensity for the various duties 0.30 micrometers space patterns. Even for hole patterns, a 2.0 micrometers common depth of focus can be achieved. These results indicate that KrF excimer laser lithography is a powerful candidate for beyond 0.25 micrometers -rule devices. It is also confirmed that i-line lithography is an expectable candidate for the second generation of 0.35 micrometers -rule devices.

Subquarter micron optical lithography with practical superresolution technique

A method of forming a pattern using a phase shift mask which comprises applying at least first and second exposures. At least one exposure is conducted by using a phase shifting mask and at least the other exposure is conducted for compensating the amount of light at a phase shifting boundary of the phase shifting mask, the pattern having an inter-pattern distance on a substrate of less than 2.4×λ/NA. The method of the present invention is applicable also to the formation of a pattern to which the existing phase shifting technique can not be applied, as well as to a pattern in which sub-patterns as the phase shifting portions can not be provided, whereby a pattern at a high resolution power can be obtained irrespective of the pattern shape.

Method of forming a pattern using a phase shifting mask

PROBLEM TO BE SOLVED: To provide an encryption device, an encryption method, and an encryption program which are safe not only for DPA but also for higher DPA. SOLUTION: An encryption device generating a cipher text block from a plain text block is provided with a random number generator generating a plurality of random numbers, a selector selecting at random a single masking random number from the random numbers, a mask processor performing mask processing to the plain block by using the masking random number selected by the selector, a storage storing a first table representing a primary S box, a converter converting the first table into a second table representing a deformed S box based on the masking random number selected by the selector, and an encryption portion generating the cipher text block from the plain text block after the mask processing by a stage function including a first calculation using an enlarged key based on key information and a second calculation using the second table. COPYRIGHT: (C)2007,JPO&INPIT

Hideo Shimizu

Papers

Encryption apparatus and encryption method

Phase shift mask and method of manufacturing the same

Subquarter micron optical lithography with practical superresolution technique

Method of forming a pattern using a phase shifting mask

Encryption device, encryption method, and encryption program