An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Oxide semiconductor film and semiconductor device

It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Transistor and display device

In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×1019 (atoms/cm3) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved.

Logic circuit and semiconductor device

To provide a signal processing circuit including a nonvolatile memory circuit with a novel structure, the signal processing circuit includes an arithmetic portion, a memory, and a control portion for controlling the arithmetic portion and the memory. The control portion includes a set of a volatile memory circuit and a first nonvolatile memory circuit for storing data held in the volatile memory circuit, the memory includes a plurality of second nonvolatile memory circuits, and the first nonvolatile memory circuit and the second nonvolatile memory circuit each include a transistor having a channel in an oxide semiconductor layer and a capacitor in which one of a pair of electrodes is electrically connected to a node which is set in a floating state when the transistor is turned off.

Signal processing circuit

The present invention provides a structure in which an amplitude-modulation mode and a frequency-modulation mode are switched. A semiconductor device of the invention has: a reset control circuit to which a modulation mode select signal which selects an amplitude-modulation mode or a frequency-modulation mode and Manchester-encoded information are input, which outputs a first reset signal and a second reset signal; a first frequency-dividing circuit to which a carrier wave is input, which outputs a sub-carrier wave responding to the amplitude-modulation mode or a frequency-modulation signal responding to the frequency-modulation mode, according to the first reset signal; a second frequency-dividing circuit which outputs a basic clock of which a duty ratio is different between the amplitude-modulation mode and the frequency-modulation mode, according to the second reset signal and an output of the first frequency-dividing circuit; and an ASK/FSK switching portion to which an output from the first frequency-dividing circuit and Manchester-encoded information are input, which outputs an amplitude-modulation signal or a frequency-modulation signal according to the modulation mode select signal.

Semiconductor device and wireless communication system

The low-power display technology of liquid crystal display (LCD) including crystalline IGZO by variable frame frequency has been previously reported. Application of the technology to controller and processor unit as well as the LCD and the driver(s) proposes a method for saving power of the whole display system.

43.1: Low-power Display System Driven by Utilizing Technique Using Crystalline IGZO Transistor

Provided is a structure which is capable of central control of an electric device and a sensor device and a structure which can reduce power consumption of an electric device and a sensor device. A central control system includes at least a central control device, an output unit, and an electric device or a sensor device. The central control device performs arithmetic processing on information transmitted from the electric device or the sensor device and makes the output unit output information obtained by the arithmetic processing. It is possible to know the state of the electric device or the sensor device even apart from the electric device or the sensor device. The electric device or the sensor device includes a transistor which includes an activation layer using a semiconductor with the band gap wider than that of single crystal silicon.

Hidetomo Kobayashi

Papers

Logic circuit and semiconductor device

Signal processing circuit

Semiconductor device and wireless communication system

43.1: Low-power Display System Driven by Utilizing Technique Using Crystalline IGZO Transistor

Central control system